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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications
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Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications

机译：使用VHF-PECVD制造三结薄膜太阳能电池的非晶碳化硅膜

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摘要

Preparation of intrinsic hydrogenated amorphous silicon carbide (i-a-SiC:H) thin films for use as a top cell of triple junction solar cells is presented. These films were deposited using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with monomethyl silane (MMS) gas as the carbon source. Deposition conditions were explored to obtain films with a wide gap and low defect density. It was confirmed that the hydrogen dilution ratio plays an important role in enhancing the film properties. Employing a-SiC:H film as an intrinsic layer of single junction cell, open-circuit voltage as high as 0.99V has been achieved.
机译：提出了本征氢化非晶碳化硅（i-a-SiC：H）薄膜的制备，该薄膜用作三结太阳能电池的顶部电池。这些薄膜是使用超高频等离子体增强化学气相沉积（VHF-PECVD）技术以单甲基硅烷（MMS）气体为碳源进行沉积的。探索沉积条件以获得具有宽间隙和低缺陷密度的膜。证实了氢稀释率在提高膜性能中起重要作用。通过使用a-SiC：H膜作为单结电池的本征层，已经实现了高达0.99V的开路电压。

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