THE EFFECT OF NITROGEN CONCENTRATION AT SILICON OXYNITRIDE GATE INSULATORS FORMED BY ~(28)N_2~+ IMPLANTATION INTO SILICON WITH ADDITIONAL CONVENTIONAL OR RAPID THERMAL OXIDATION

机译：〜（28）N_2〜+植入硅中再进行常规或快速热氧化对氮氧化硅门绝缘子的氮浓度影响

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Silicon oxynitride (SiO_xN_y) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electrical characteristics, such as field effect mobility between 390 cm~2/Vs and 530 cm~2/Vs, and sub-threshold slope between 70 mV/decade and 150 mV/decade, were obtained. MOS capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. The Equivalent Oxide Thickness (EOT) of the films were obtained from C-V curves, resulting in values between 2.9 nrn and 12 nm. SiO_xN_y gate insulators with EOT between 2.9 nm and 4.3 nm have presented gate leakage current densities between 3 nA/cm~2 and 50 nA/cm~2. The electrical characteristics were compared and correlated with the nitrogen concentration profiles at SiO_xN_y/Si of the structures, obtained by Secondary Ion Mass Spectrometry (SIMS).

机译：在常规或快速热氧化之前，已通过将氮离子注入到Si衬底中获得了氮氧化硅（SiO_xN_y）绝缘体。这些薄膜已被用作nMOSFET和MOS电容器中的栅极绝缘体。获得了nMOSFET的电学特性，例如在390 cm〜2 / Vs和530 cm〜2 / Vs之间的场效应迁移率以及在70 mV / decade和150 mV / decade之间的亚阈值斜率。 MOS电容器用于获得电容电压（C-V）和电流电压（I-V）测量。从C-V曲线获得薄膜的等效氧化物厚度（EOT），其值在2.9 nrn和12 nm之间。 EOT在2.9 nm和4.3 nm之间的SiO_xN_y栅绝缘体的栅漏电流密度在3 nA / cm〜2和50 nA / cm〜2之间。比较了电特性，并将其与通过二次离子质谱（SIMS）获得的结构的SiO_xN_y / Si处的氮浓度曲线相关联。

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《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.250-258|共9页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
A. G. Felicio; J.A. Diniz; J.Godoy Fo.; I.Doi; M. A.A.Pudenzi; J.W. SWART;
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FEEC and CCS, 13083-970, CP.6101, Campinas, SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Impact of nitrogen (N/sub 2//sup +/) implantation into polysilicon gate on thermal stability of cobalt silicide formed on polysilicon gate [J] . Wein-Town Sun, Ming-Chi Liaw IEEE Transactions on Electron Devices . 1998,第9期

机译：向多晶硅栅中注入氮（N / sub 2 // sup + /）对在多晶硅栅上形成的硅化钴的热稳定性的影响
2. Formation of Nanocrystalline Silicon Films Using High-Dose H~+ Ion Implantation into Silicon-on-Insulator Layers with Subsequent Rapid Thermal Annealing [J] . I. E. Tyschenko, V. P. Popov, A. B. Talochkin, Semiconductors . 2004,第1期

机译：使用大剂量H〜+离子注入绝缘体上硅层并随后进行快速热退火来形成纳米晶硅膜
3. Characterization of 1.9- and 1.4-nm Ultrathin Gate Oxynitride by Oxidation of Nitrogen-implanted Silicon Substrate [J] . Qiuxia Xu, He Qian, Zhensheng Han, IEEE Transactions on Electron Devices . 2004,第1期

机译：氮注入硅衬底的氧化表征1.9和1.4 nm超薄栅氧氮化物
4. Proton radiation hardening of silicon oxynitride gate nMOSFETs formed by nitrogen implantation into silicon prior to oxidation [C] . Diniz, J.A., Fo, . 2002

机译：通过在氧化之前将氮注入硅中而形成的氮氧化硅栅极nMOSFET的质子辐射硬化
5. THERMAL NITRIDATION OF SILICON IN ACTIVE NITROGEN (THIN DIELECTRICS, PLASMA PROCESSING, VLSI MATERIALS, SILICON-NITRIDE, SILICON-OXYNITRIDE) [D] . GIRIDHAR, R. V. 1985

机译：活性氮中硅的热氮化（薄介电体，等离子体处理，超大型材料，氮化硅，氧化硅）
6. Reduced Graphene Oxide Embedded with MQ Silicone Resin Nano-Aggregates for Silicone Rubber Composites with Enhanced Thermal Conductivity and Mechanical Performance [O] . Weijie Liang, Xin Ge, Jianfang Ge, 2018

机译：嵌有MQ硅树脂纳米骨料的还原石墨烯氧化物具有增强的导热性和机械性能可用于硅橡胶复合材料
7. CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES FORMED BY ION IMPLANTATION OF OXYGEN (SILICON, DEFECTS, INSULATOR). [O] . WANG PING. 1986

机译：离子注入氧（硅，缺陷，绝缘体）形成的绝缘体上硅结构的特征。
8. Study of Gate Oxide Leakage and Charge Trapping in ZMR (Zone-Melting-Recrystallized) and SIMOX (Oxygen-Implanted) SOI (Silicon-On-Insulator) MOSFET's [R] . Lee, C. T., Burns, J. A. 1988

机译：ZmR（区域熔化 - 再结晶）和sImOX（氧注入）sOI（绝缘体上硅）mOsFET中的栅极氧化物泄漏和电荷俘获的研究

THE EFFECT OF NITROGEN CONCENTRATION AT SILICON OXYNITRIDE GATE INSULATORS FORMED BY ~(28)N_2~+ IMPLANTATION INTO SILICON WITH ADDITIONAL CONVENTIONAL OR RAPID THERMAL OXIDATION

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