Progress and Issues of Planarization CMP Process for ULSI

机译：ULSI平面化CMP工艺的进展和问题

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CMP technology is a key factor for planarization of ILD, plug and interconnection. Cu dual damascene with a combination of low-k ILD becomes a major structure for multi-level interconnection. CMP tool is now in a second generation and is entering into a third generation. Cu CMP process has still many problems to solve, however, there has been a progress in Cu slurry and post cleaning.

机译：CMP技术是ILD，插头和互连平面化的关键因素。 Cu双镶嵌与低k ILD的结合成为多层互连的主要结构。 CMP工具现在处于第二代，并且正在进入第三代。 Cu CMP工艺仍然有许多问题需要解决，但是，在Cu浆料和后清洁方面已经取得了进展。

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来源
《19th Symposium on "Materials Science and Engineering", Dec 13-14, 2000, Koganei Campus of Hosei University》|2000年|p.9-16|共8页
会议地点 Koganei(JP)
作者
Masaharu Kinoshita; Naoaki Sakurai; Hideaki Hirabayashi; Akiko Saito; Naoto Miyashita;
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作者单位

Corporate Manufacturing Engineering Center, Toshiba Corporation 33 Shin-Isogo-cho, Isogo-ku, Yokohama, 235-0017, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Progress and Issues of Planarization CMP Process for ULSI [C] . Masaharu Kinoshita, Naoaki Sakurai, Hideaki Hirabayashi, symposium on materials science and engineering . 2001

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Progress and Issues of Planarization CMP Process for ULSI

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