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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >ANGULAR INTEGRITY CHALLENGE FOR ION IMPLANTATION PROCESSES IN ADVANCED CMOS DEVICES
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ANGULAR INTEGRITY CHALLENGE FOR ION IMPLANTATION PROCESSES IN ADVANCED CMOS DEVICES

机译：先进CMOS设备中离子注入过程的角度完整性挑战

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摘要

Two sources of angular variation in batch implanters have been quantified with a theoretical approach. The first is the variation in tilt/twist angles across a wafer induced by a concave disk design. The second is the beam divergence due to space charge induced beam expansion. The consequences of these angular variations in different implant processes have been discussed in detail. For well application, the angular variation causes a well to well isolation concern. For halo implant, the batch implanter can not meet its high tilt requirements. For the source/drain extension (SDE) implant, the high divergent beam greatly degrades the lateral junction abruptness. The single wafer parallel beam system is a solution for these problems.
机译：批量注入机中角度变化的两个来源已通过理论方法进行了量化。首先是由凹盘设计引起的晶片上的倾斜/扭转角的变化。第二个是由于空间电荷引起的光束扩展而引起的光束发散。这些角度变化在不同植入工艺中的后果已经详细讨论过。对于井的应用，角度变化会引起井对井的隔离问题。对于光环植入，批量植入机无法满足其高倾斜要求。对于源/漏扩展（SDE）植入物，高发散束大大降低了横向结的突变性。单晶片平行光束系统是解决这些问题的方法。

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