RAPID THERMAL ANNEALING INDUCED BORON PENETRATION IN MOS TRANSISTORS

机译：快速热退火诱导MOS晶体管中的硼渗透

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Rapid Thermal Annealing (RTA) is widely used in modern semiconductor processing to achieve low thermal budget control for shallow junctions, high level of dopant activation and defect annealing. However the excessive diffusion of dopants, in particular boron, during RTA may have an impact on transistor characteristics, such as threshold voltage. In this paper, we reported that p+ RTA process would have a minor impact on threshold voltage unless the temperature exceeded around 1060℃ when significant boron penetration took place. The obvious phenomenon was threshold voltage drift with a large spread. During process matching on two different RTA machines, it was also found that the process conditions matched on test wafers did not match very well on product wafers. The possible cause was variant localized heating effect on patterned wafers for different RTA machines.

机译：快速热退火（RTA）被广泛用于现代半导体工艺中，以实现对浅结的低热预算控制，高水平的掺杂剂激活和缺陷退火。但是，在RTA期间，掺杂剂（尤其是硼）的过度扩散可能会对晶体管特性（例如阈值电压）产生影响。在本文中，我们报道了p + RTA工艺将对阈值电压产生较小的影响，除非当硼显着渗透时温度超过1060℃左右。明显的现象是阈值电压漂移较大。在两台不同的RTA机器上进行工艺匹配时，还发现在测试晶圆上匹配的工艺条件与产品晶圆上的匹配不是很好。可能的原因是不同RTA机器对图案化晶圆产生的局部局部加热效应不同。

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来源
《1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China》|2001年|p.263-267|共5页
会议地点 Shanghai(CN);Shanghai(CN)
作者
Jun Qian; Yeow Meng Teo; Kelvin Low; Rajan Rajgopal; Chang Fu;
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作者单位

Chartered Semiconductor Manufacturing Ltd. 60 Woodlands Ind. Park D, Street 2, Singapore 738406;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 ℃ [J] . Chen-Ming Hu, Yew Chung Sermon Wu, Jun-Wei Gong Japanese journal of applied physics . 2007,第11Pt1期

机译：镍热诱导565℃快速热退火与常规炉退火制备的薄膜晶体管的比较
2. Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing [J] . P. Leveque, D. Mathiot, J. S. Christensen, Journal of Applied Physics . 2006,第7期

机译：中温热退火对快速热退火过程中硼扩散增强的影响
3. Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of in situ Boron-Doped Si_(0.75)Ge_(0.25) Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant [J] . Frank Wirbeleit Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum . 2010,第Null期

机译：碳共注入先进快速热退火后原位掺杂硼的Si_（0.75）Ge_（0.25）外延膜的硼向外扩散的局部密度扩散模型（LDD-）
4. Rapid thermal annealing induced boron penetration in MOS transistors [C] . Jun Qian, Yeow Meng Teo, Kelvin Low, International conference on semiconductor technology . 2001

机译：在MOS晶体管中快速热退火诱导硼渗透
5. Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing. [D] . Camillo-Castillo, Renata A. 2006

机译：在快速辅助快速热退火过程中，硼的活化和扩散会改变硅的初始工艺条件。
6. A Large-Area Nanoplasmonic Sensor Fabricated by Rapid Thermal Annealing Treatment for Label-Free and Multi-Point Immunoglobulin Sensing [O] . Hana Tzu-Han Lin, Chuan-Kai Yang, Chi-Chen Lin, 2017

机译：通过快速热退火处理制造的大面积纳米等离子体传感器用于无标记和多点免疫球蛋白传感。
7. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings [O] . Lanzerath, F., Buca, D., Trinkaus, H., 2008

机译：通过快速热退火和闪光灯退火使硅和绝缘子上的硅中的硼活化和扩散

RAPID THERMAL ANNEALING INDUCED BORON PENETRATION IN MOS TRANSISTORS

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