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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >REAL-TIME OBSERVATION OF SURFACE STRESS DURING INITIAL OZONE-OXIDATION OF Si(100)
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REAL-TIME OBSERVATION OF SURFACE STRESS DURING INITIAL OZONE-OXIDATION OF Si(100)

机译：Si（100）初始臭氧氧化过程中表面应力的实时观察

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摘要

We observed surface-stress evolution during ultrathin oxide film growth on Si(100) formed by highly-concentrated ozone gas (> 93 at% ) at room temperature. Using an optical micro-mechanical cantilever method, we observed the real-time stress changes during the ozone exposure. We prepared cantilever samples with surfaces of H-terminated Si(100) and H-desorbed Si(100). The results showed that the stress behavior of initial oxidation on the H-passivated surface, which exhibited an increase followed by a decrease of the compressive stress, was similar to that on the H-desorbed surfaces, but the increase rate of the compressive stress was lower than that on the H-desorbed surface. In contrast, the decrease rate of H-terminated surface was higher in spite of the low reactivity on oxidation. The results were attributed to a different mechanism of ozone oxidation on the H/Si surface from that on the Si surface.
机译：我们观察到在室温下由高浓度臭氧气体（> 93 at％）形成的Si（100）上的超薄氧化膜生长过程中的表面应力演变。使用光学微机械悬臂法，我们观察了臭氧暴露过程中的实时应力变化。我们准备了带有H端Si（100）和H脱附Si（100）表面的悬臂样品。结果表明，H钝化表面上初始氧化的应力行为与H脱附表面上的应力行为相似，但先增大后减小。低于H脱附的表面。相反，尽管在H上的氧化反应性较低，但H端表面的降低率仍然较高。结果归因于H / Si表面上的臭氧氧化机理与Si表面上的臭氧氧化机理不同。

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