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首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >PHOTOINDUCED CHARGE GENERATION AND ULTRAFAST RESPONSE IN NANOCOMPOSITE Si/SiO_2 THIN FILMS
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PHOTOINDUCED CHARGE GENERATION AND ULTRAFAST RESPONSE IN NANOCOMPOSITE Si/SiO_2 THIN FILMS

机译：纳米复合Si / SiO_2薄膜的光诱导电荷产生和超快响应

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Crystalline nanoparticle Si enriched SiO_2 thin films were successfully prepared by Ar sputtering deposition on quartz substrates. The investigation of luminescence and time-resolved emission shows that the c-Si nanoparticles are distributed in SiO_2 matrix with an average size of the nanoparticles being around 2.2 nm. The valence band (VB) to conduction band (CB) energy gap was determined to be ～ 2.7 ev. In this study, we employ rare-earth Eu as a spectral probe, and the ions were introduced into the samples. More information about the material structure, nanoparticle surface and interaction between dopants and nanoparticles were obtained. It was found that by ultrashort (femtoseconds and picoseconds) pulse laser excitation the charge carriers produced in CB modifies the material susceptibility which is the key factor for ultarafast device application. The ultrafast response was measured using degenerate-four-wave-mixing technique. c-Si nanoparticles show extremely strong instantaneous response (IR) signal with FWHM of 200fs, followed by a slow response (SR) signal lasting for a few nanoseconds. The observed responses are associated with the charge carriers in CB. While the sample doped with europium ions the SR was found to be altered, showing a response increase in subnanosecond region. These properties show that this material has a potential of application for ultrafast optical switching.
机译：通过在石英基板上进行Ar溅射沉积，成功制备了纳米晶富Si的SiO_2薄膜。发光和时间分辨发射的研究表明，c-Si纳米颗粒分布在SiO_2基质中，纳米颗粒的平均尺寸为2.2nm左右。价带（VB）与导带（CB）的能隙确定为〜2.7 ev。在这项研究中，我们使用稀土Eu作为光谱探针，并将离子引入样品中。获得了有关材料结构，纳米颗粒表面以及掺杂剂和纳米颗粒之间相互作用的更多信息。已经发现，通过超短（飞秒和皮秒）脉冲激光激发，CB中产生的电荷载流子改变了材料的磁化率，这是超快器件应用的关键因素。使用简并四波混合技术测量超快响应。 c-Si纳米颗粒在FWHM为200fs时显示出非常强的瞬时响应（IR）信号，然后是持续几纳秒的慢响应（SR）信号。观察到的响应与CB中的电荷载流子相关。当样品中掺有euro离子时，发现SR发生了变化，表明亚纳秒区域的响应增加。这些特性表明该材料具有超快光学开关的应用潜力。

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