首页> 外文会议>1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China >THEORY OF SI OXIDE GROWTH RATE TAKING ACCOUNT OF INTERFACIAL SI EMISSION
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THEORY OF SI OXIDE GROWTH RATE TAKING ACCOUNT OF INTERFACIAL SI EMISSION

机译:考虑界面SI排放的SI氧化物生长速率理论

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摘要

A novel picture for the silicon thermal oxide growth process is proposed based on results of first-principles calculations. In the picture, silicons are massively emitted from the oxide/silicon interface into the oxide during the growth process. Due to a large volume expansion from silicon to oxide at the interface, where the oxidation reaction occurs, many silicons should inevitably be emitted to release the stress accumulation. Based on this picture, a new theory for the silicon thermal oxide growth rate is constructed and its efficiency is theoretically discussed by both analytical and numerical approaches. The study reveals that our picture can consistently explain many faults in the classical Deal-Grove picture, such as the initial enhanced oxidation.
机译:基于第一性原理的计算结果,提出了硅热氧化物生长过程的新图景。在图中,在生长过程中,硅从氧化物/硅界面大量释放到氧化物中。由于发生氧化反应的界面处从硅到氧化物的体积膨胀大,因此不可避免地会释放出许多硅以释放应力累积。基于此图,构建了硅热氧化物生长速率的新理论,并通过分析和数值方法从理论上讨论了其效率。研究表明,我们的图片可以始终如一地解释经典Deal-Grove图片中的许多缺陷,例如初始增强的氧化。

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