OHMIC CONDUCTIVITY AND ACTIVATION ENERGY OF Pb_(1+Y)(Zr_(0.3)Ti_(0.7))O_3 THIN FILMS

机译：Pb_（1 + Y）（Zr_（0.3）Ti_（0.7））O_3薄膜的热导率和活化能

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The bulk conductivity of Pb_(1+y)(Zr_(0.3)Ti_(0.7)7)O_3 thin films are investigated using direct current (DC) and alternate current (AC) methods as a function of temperature and excess Pb concentration. The ohmic component shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb~(3+) acceptor centers, while the latter could be due to a different defect level yet to be identified.

机译：利用直流（DC）和交流（AC）方法研究Pb_（1 + y）（Zr_（0.3）Ti_（0.7）7）O_3薄膜的体电导率随温度和过量Pb浓度的变化。取决于温度范围和过量的Pb含量，欧姆成分显示出0.26和0.12 eV的两种激活能。前者与Pb〜（3+）受体中心相关，而后者可能是由于有待确定的不同缺陷水平所致。

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来源
《1st International Conference on Semiconductor Technology Vol.1, May 27-30, 2001, Shanghai, China》|2001年|p.416-421|共6页
会议地点 Shanghai(CN);Shanghai(CN)
作者
D. P. Chu; B. M. McGregor; P. Migliorato; C. Durkan; M. E. Welland; K. Hasegawa; T. Shimoda;
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Epson Cambridge Laboratory, 8c King's Parade, Cambridge CB2 1SJ, UK;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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OHMIC CONDUCTIVITY AND ACTIVATION ENERGY OF Pb_(1+Y)(Zr_(0.3)Ti_(0.7))O_3 THIN FILMS

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