首页> 外文会议>2000 International Symposium on Microelectronics, Sep 20-22, 2000, Boston, Massachusetts >Ni-Zn-Cu Ferrite Embedded into Low Temperature Co-fired Ceramic Substrates
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Ni-Zn-Cu Ferrite Embedded into Low Temperature Co-fired Ceramic Substrates

机译:嵌入低温共烧陶瓷基板中的Ni-Zn-Cu铁氧体

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Inserting a ferrite layer into a low-temperature cofired ceramic substrate offers the potential of burying inductors in multilayer ceramic substrates. To cofire a ceramic substrate at low temperatures, ferrite must be densified at a low temperature. With the addition of Bi_2O_3 or PbO, Ni-Zn-Cu ferrite can be densified at 900℃. The doped Bi_2O_3 not only lowers the sintering temperature but also increases the permeability of Ni-Zn-Cu ferrite. The inductance of about 1.5 μ H was obtained after the specimens were fired at 900℃ for 60 min. The value of inductance was almost unchanged in the frequency range between 1 MHz and 40 MHz.
机译:将铁氧体层插入低温共烧陶瓷基板中提供了将电感器掩埋在多层陶瓷基板中的潜力。为了在低温下共烧陶瓷基板,必须在低温下将铁氧体致密化。通过添加Bi_2O_3或PbO,可以在900℃致密化Ni-Zn-Cu铁氧体。掺杂的Bi_2O_3不仅降低了烧结温度,而且提高了Ni-Zn-Cu铁氧体的磁导率。样品在900℃下烧成60分钟后可获得约1.5μH的电感。在1 MHz至40 MHz的频率范围内,电感值几乎不变。

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