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首页> 外文会议>2002 ASME International Mechanical Engineering Congress and Exposition , Nov 17-22, 2002, New Orleans, Louisiana >CMOS-COMPATIBLE MICRO-FLUIDIC CHIP COOLING USING BURIED CHANNEL FABRICATION
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CMOS-COMPATIBLE MICRO-FLUIDIC CHIP COOLING USING BURIED CHANNEL FABRICATION

机译：使用埋入式通道制造的CMOS兼容微流芯片冷却

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摘要

We present a CMOS-compatible method of fabricating buried channels within bulk single-crystal silicon serving as the substrate of CMOS circuitry. The channels were designed to provide a compact, forced convection heat transfer liquid cooling approach to microprocessor and integrated circuit thermal management The baseline fabrication process consumers 8-10% of front-side surface area and serves as a foundation for incorporation of buried-channel cooling with CMOS electronics. Channels were fabricated with diameters ranging from 43-92 μm with sacrificial surface area trenches 10 μm wide. A microchanne) heat transfer solution was designed, simulated, and tested with cooling of up to 21 W/cm~2. Compatibility with CMOS electronics was investigated by evaluating the post-process transistor performance of a simple oscillator circuit
机译：我们提出了一种在制造CMOS电路基板的块状单晶硅中制造掩埋通道的CMOS兼容方法。这些通道的设计旨在为微处理器和集成电路热管理提供紧凑的强制对流传热液体冷却方法。基线制造工艺消耗了正面表面积的8-10％，并为采用埋入式通道冷却奠定了基础CMOS电子产品。制作的通道直径范围为43-92μm，牺牲表面积沟槽的宽度为10μm。对微通道传热解决方案进行了设计，模拟和测试，冷却速度高达21 W / cm〜2。通过评估简单振荡器电路的后处理晶体管性能，研究了与CMOS电子器件的兼容性

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