A Look into the Future for SiGe HBTs

机译：SiGe HBT的未来展望

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摘要

SiGe HBT performance will continues to increase with no forseeable significant reliaiblity roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.

机译：SiGe HBT性能将继续提高，并且没有可预见的重大可靠性障碍。设计人员将需要注意晶体管的配置和使用条件。

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来源
《2003 International Symposium on Compound Semiconductors Aug 25-27, 2003 San Diego, CA》|2003年|p.207-208|共2页
会议地点 San Diego CA(US);San Diego CA(US)
作者
D.L. Harame; G. Freeman; J. Rieh; B.Jagannathan; D.Greenberg; A.Joseph; J. Johnson; F. Guarin; Z. Yang; D. Ahlgren; P.Cottrell; J. Dunn; B.Omer; S.Subbanna;
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IBM, MS 863C, 1000 River Road, Essex Junction, Vermont, 05452, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Source of Low Frequency Noise in SiGe HBTs [J] . WANG Kai, LIU Yuan, DENG Wan-Ling 东华大学学报（英文版） . 2015,第006期
2. Analytical Modeling of Base Transit Time of SiGe HBTS Including Concentration Dependent Bandgap Narrowing Effect [J] . Sukla Basu 电子科技学刊：英文版 . 2010,第002期
3. On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology [J] . Cardoso Adilson S., Omprakash Anup P., Chakraborty Partha Sarathi, Electron Devices, IEEE Transactions on . 2015,第4期

机译：第四代90nm SiGe BiCMOS技术中SiGe HBT的低温RF线性
4. On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}hbox{xBV}_{rm CEO}$ Product of High-Speed SiGe HBTs [J] . Choi L.J., Van Huylenbroeck S., Piontek A., IEEE Electron Device Letters . 2007,第4期

机译：关于在发射极中使用SiGe尖峰来改善高速SiGe HBT产品的$ f_ {T} hbox {xBV} _ {rm CEO} $产品
5. On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}hbox{xBV}_{rm CEO}$ Product of High-Speed SiGe HBTs [J] . L. J. Choi, S. Van Huylenbroeck, A. Piontek, IEEE Electron Device Letters . 2007,第期

机译：关于在发射极中使用SiGe尖峰来改善高速SiGe HBT产品的$ f_ {T} hbox {xBV} _ {rm CEO} $产品
6. State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz fT/fMAX [C] . Derrier N., Rumiantsev A., Celi D. 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. . 2012

机译：表征亚太赫兹fT / fMAX的先进SiGe HBT的校准和去嵌入技术的最新发展和未来展望
7. Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop. [D] . Shah, Valay Dineshbhai. 2016

机译：SiGe HBT的功率衍生热表征和使用锁相环的定时电路设计。
8. STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs [O] . Ali Alaeddine, Cécile Genevois, Laurence Chevalier, 2011

机译：SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
9. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems [O] . Thomas Zimmer, Josef Bock, Fred Buchali, 2021

机译：SIGE HBTS和BICMOS技术的现有和未来毫米波系统

A Look into the Future for SiGe HBTs

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