首页> 外文会议>2003 Nanotechnology Conference and Trade Show Nanotech 2003 Vol.1 Feb 23-27, 2003 California, USA >Design and Fabrication of An Integrated CMOS-MEMS 3-Axis Accelerometer
【24h】

Design and Fabrication of An Integrated CMOS-MEMS 3-Axis Accelerometer

机译:集成式CMOS-MEMS三轴加速度计的设计与制造

获取原文
获取原文并翻译 | 示例

摘要

A monolithic integrated CMOS-MEMS three-axis accelerometer has been designed and fabricated. The sensor is a single structure that uses sidewall capacitors of comb fingers to sense acceleration in all three directions. The sensor plus on-chip CMOS circuitry is about 1mm by 1mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask and has only dry-etch steps involved. The sensor structure incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without any extra masks, material deposition or wafer bonding. Both behavioral simulaton and finite element simulation were conducted to verify and optimize the sensor design. A noise floor of 50 μg/Hz~(1/2) can be achieved.
机译:设计并制造了单片集成CMOS-MEMS三轴加速度计。该传感器是一个单一结构,使用梳齿的侧壁电容器来感应所有三个方向上的加速度。传感器加上片上CMOS电路的尺寸约为1mm x 1mm,是通过后CMOS微加工工艺制造的,该工艺使用互连金属层作为蚀刻掩模,并且仅涉及干法蚀刻步骤。传感器结构结合了薄膜结构和块状Si结构,以实现三轴加速度感测,而无需任何额外的掩模,材料沉积或晶圆键合。行为仿真和有限元仿真都进行了验证和优化传感器设计。可以达到50μg/ Hz〜(1/2)的本底噪声。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号