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Design and Fabrication of An Integrated CMOS-MEMS 3-Axis Accelerometer

机译：集成CMOS-MEMS 3轴加速度计的设计和制造

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A monolithic integrated CMOS-MEMS three-axis accelerometer has been designed and fabricated. The sensor is a single structure that uses sidewall capacitors of comb fingers to sense acceleration in all three directions. The sensor plus on-chip CMOS circuitry is about 1mm by 1mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask and has only dry-etch steps involved. The sensor structure incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without any extra masks, material deposition or wafer bonding. Both behavioral simulaton and finite element simulation were conducted to verify and optimize the sensor design. A noise floor of 50 μg/H can be achieved.
机译：设计和制造了单片集成CMOS-MEMS三轴加速度计。传感器是一种结构，其使用梳状手指的侧壁电容器来在所有三个方向上感测加速度。传感器加上片上CMOS电路的尺寸约为1mm，由后CMOS微加工过程制造，该过程使用互连金属层作为蚀刻掩模，并且仅涉及干蚀刻步骤。传感器结构包括薄膜结构和散装Si结构，以实现三轴加速度感测，而无需任何额外的面罩，材料沉积或晶片键合。进行行为模拟和有限元模拟，以验证和优化传感器设计。可以实现50μg/ h的噪音。

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