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首页> 外文会议>2004 4th International Conference on Microwave and Millimeter Wave Technology Proceedings >The Key Technologies in Silicon Based Microwave and RF MEMS Device Fabrication
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The Key Technologies in Silicon Based Microwave and RF MEMS Device Fabrication

机译：硅基微波和RF MEMS器件制造中的关键技术

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摘要

In this paper, the key fabrication technologies used for microwave and radio frequency MEMS devices, namely RF-MEMS, are discussed. Our studies focus on the fabrication of inductor, capacitor and switch on silicon substrate. To reduce the substrate effect, substrate modification via porous silicon method is introduced, and high Q inductor has been realized porous silicon modification substrate is showed. The Polyimide (PI) sacrificial layer technology is used for the switch and capacitor fabrication. To reduce the ohmic loss in transmission line for the RF devices used in the high frequency (around 2 GHz), a special process sequences is developed to realize the thick metallic plating. To illustrate the integrative capacity of RF MEMS with CMOS circuits, a VCO with Flip-chip MOS and MEMS packaging is designed, which present minimized parasitic effects in the device interconnection.
机译：本文讨论了用于微波和射频MEMS器件的关键制造技术，即RF-MEMS。我们的研究重点是在硅基板上制造电感器，电容器和开关。为了降低衬底效应，引入了通过多孔硅方法进行衬底改性的方法，并实现了高Q值电感器，以显示出多孔硅改性衬底。聚酰亚胺（PI）牺牲层技术用于开关和电容器的制造。为了减少用于高频（约2 GHz）的RF器件的传输线中的欧姆损耗，开发了特殊的工艺流程以实现厚金属镀层。为了说明具有CMOS电路的RF MEMS的集成能力，设计了具有倒装MOS和MEMS封装的VCO，在器件互连中呈现出最小的寄生效应。

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