Doping of Ta2O5 as a way to extend its potential for DRAM applications

机译：掺杂Ta 2 O 5 作为扩展其在DRAM应用中潜力的方式

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The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to tailor Ta2O5 properties towards meeting the criteria for future technological nodes are discussed. Essential in the engineering of advanced DRAM storage capacitors parameters and characteristics of Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2-Ta2O5 layers as an illustration of both the benefits and the disadvantages of modified Ta2O5-based stacks are presented.

机译：用适当的元素掺杂Ta 2 O 5 薄膜或将其与另一种高k介电质混合作为突破来定制Ta 2 O讨论了满足未来技术节点标准的 5 属性。在高级DRAM存储电容器工程中必不可少的参数和掺Ti的Ta 2 O 5 ，掺Hf的Ta 2 O 5 和混合的HfO 2 -Ta 2 O 5 层说明改性Ta的优缺点给出了基于 2 O 5 的堆栈。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.427-434|共8页
会议地点 Nis(RS);Nis(RS)
作者
Atanassova E.; Paskaleva A.; Spassov D.;
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Inst. of Solid St. Phys., Bulg. Acad. of Sci., 72 Tzarigradsko Chaussee, Sofia 1784, Bulgaria;

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正文语种 eng
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Doping of Ta2O5 as a way to extend its potential for DRAM applications

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