RTS noise amplitude and electron concentration in MOSFETs

机译：MOSFET中的RTS噪声幅度和电子浓度

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Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.

机译：在从亚阈值到反转区域的各种偏置条件下，在亚微米MOSFET中测量了随机电报信号（RTS）噪声，并分析了幅度和平均捕获与发射时间与电场和电子浓度的关系。沟道中电荷载流子传输的数值模型用于根据实验特性估算源极和漏极之间的陷阱位置。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.475-478|共4页
会议地点 Nis(RS);Nis(RS)
作者
Pavelka J.; Sikula J.; Chvatal M.; Tacano M.; Toita M.;
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Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 8, 61600 Brno, Czech Republic;

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正文语种 eng
中图分类微模组件;
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1. A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation [J] . Ma Zhongfa, Zhang Peng, Wu Yong, Microelectronics reliability . 2010,第2期

机译：通过蒙特卡洛模拟对纳米MOSFET中RTS噪声幅度进行渗滤研究
2. Gate length effect on the RTS noise amplitude in SOI MOSFETs [J] . Simoen E., Claeys C. IEEE Electron Device Letters . 1996,第4期

机译：栅极长度对SOI MOSFET中RTS噪声幅度的影响
3. Explaining the amplitude of RTS noise in submicrometer MOSFETs [J] . Simoen E., Dierickx B. IEEE Transactions on Electron Devices . 1992,第2期

机译：解释亚微米MOSFET中RTS噪声的幅度
4. RTS Noise Amplitude and Electron Concentration in MOSFETs [C] . J. Pavelka, J. Sikula, M. Chvatal, International Conference on Microelectronics . 2010

机译：MOSFET中的噪声幅度和电子浓度
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RTS noise amplitude and electron concentration in MOSFETs

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