On p-n junction depletion capacitance parameter extraction strategies

机译：关于p-n结耗尽电容参数提取策略

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Two strategies for extraction of p-n junction's depletion capacitance compact model parameters are identified and compared by the present paper. Applying these in a numerical experiment and device measurements, it is demonstrated that the reproducibility of the estimated parameter values can strongly depend on the extraction strategy applied within the nonlinear regression procedure. An approach to assess statistical properties of parameter extraction strategies is presented and the merits of such assessments are shown.

机译：本文确定并比较了两种提取p-n结耗尽电容紧凑模型参数的策略。将这些应用于数值实验和设备测量中，证明了估计参数值的可重复性在很大程度上取决于非线性回归程序中应用的提取策略。提出了一种评估参数提取策略统计属性的方法，并显示了这种评估的优点。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.87-90|共4页
会议地点 Nis(RS);Nis(RS)
作者
Milovanovic Vladimir; van der Toorn Ramses;
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Delft Institute of Microsystems and Nanoelectronics (DIMES), Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Delft University of Technology (TU Delft), Mekelweg 4, 2628CD Delft, Netherlands;

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正文语种 eng
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2. Fabrication of p-SnO-SnO_2 transparent p-n junction diode by spray pyrolysis and extraction of device's intrinsic parameters [J] . Eqbal Ebitha, Raphael Rakhy, Saji K. J., Materials Letters . 2019,第Jul15期

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4. On p-n Junction Depletion Capacitance Parameter Extraction Strategies [C] . Vladimir Milovanovic, Ramses van der Toorn International Conference on Microelectronics . 2010

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On p-n junction depletion capacitance parameter extraction strategies

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