Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

机译：温度对AlGaN / GaN高电子迁移率晶体管（HEMT）中二维量子阱电子电流的影响

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An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in HEMTs has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also take in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs device.

机译：本文建立了HEMT中二维量子阱AlGaN / GaN电子电流的解析数值模型，该模型能够准确预测温度对二维量子阱电子电流的影响。该模型的显着未来被纳入了界面量子阱中的全部和部分占据的外滩。此外，还考虑了取决于带隙的温度，量子阱电子密度，阈值电压，电子迁移率，介电常数，极化感应器件中的电荷密度。计算得出的模型结果与HEMTs设备的现有实验数据非常吻合。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.189-193|共5页
会议地点 Nis(RS);Nis(RS)
作者
Yahyazadeh R.; Hashempour Z.;
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Department of Physics, Islamic Azad University of Khoy branch, Khoy, Iran 58135/175;

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正文语种 eng
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1. Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation [J] . Syaranamual G. J., Sasangka W. A., Made R. I., Microelectronics & Reliability . 2016,第SEPa期

机译：二维电子气（2DEG）在AlGaN / GaN高电子迁移率晶体管（HEMT）导通状态退化中的作用
2. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) [J] . Khanal Min P., Uprety Sunil, Mirkhani Vahid, Journal of Applied Physics . 2018,第21期

机译：100 keV质子辐照对AlGaN / GaN高电子迁移率晶体管（HEMT）的电子和光学性能的影响
3. A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs) [J] . Asgari A, Kalafi M, Faraone L Physica, E. Low-dimensional systems & nanostructures . 2005,第4期

机译：AlGaN / GaN高电子迁移率晶体管（HEMT）的准二维电荷传输模型
4. Effect of Temperature on the Electronic Current of Two Dimensional Quantum Well in AlGaN/GaN High Electron Mobility Transistors (HEMT) [C] . R. Yahyazadeh, Z. Hashempour International Conference on Microelectronics . 2010

机译：AlGaN / GaN高电子迁移率（HEMT）中的温度对二维量子阱的电子电流的影响
5. Design, simulation and fabrication of AlGaN/GaN normally-off high electron mobility transistors with investigation on temperature stability [D] . Yun-Hsiang, Wang. 2016

机译：常压高电子迁移率晶体管的设计，仿真和制造，具有温度稳定性研究
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT) [O] . 2011

机译：温度对AlGaN / GaN高电子移动晶体管（HEMT）的电子电流的影响
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

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