SPM electrical characterization of Ti/Al — Based ohmic contacts for sub-micron devices

机译：Ti / Al的SPM电气特性-亚微米器件的基于欧姆的接触

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The electrical properties of Ti/Al-based ohmic contacts with two types of barrier films, Ti and Mo, are investigated in dependence on the Ti/Al ratio and the type of the barrier layer. They are explored by I-V, resistivity and surface potential measurements. It is found out that the Ti/Al/Ti/Au contact composition with Ti/Al ratio of 0.43 exhibits the lowest contact resistivity and smallest variations of the surface potential amplitude. The contacts with the same Ti/Al ratio and a Mo barrier layer show better surface morphology but poorer electrical properties.

机译：取决于Ti / Al比和阻挡层的类型，研究了具有两种类型的阻挡膜Ti和Mo的基于Ti / Al的欧姆接触的电性能。通过IV，电阻率和表面电势测量来探索它们。发现具有0.43的Ti / Al比的Ti / Al / Ti / Au接触组合物表现出最低的接触电阻率和最小的表面电势幅度变化。具有相同的Ti / Al比和Mo阻挡层的触点显示出较好的表面形态，但电性能较差。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.195-198|共4页
会议地点 Nis(RS);Nis(RS)
作者
Kolaklieva L.; Nesheva D.; Kakanakov R.; Bineva I.; Cimalla V.;
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Institute of Applied Physics, Bulgarian Academy of Sciences, 59, St. Petersburg Blvd., 4000 Plovdiv, Bulgaria;

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原文格式 PDF
正文语种 eng
中图分类微模组件;
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专利

1. New challenges to the modeling and electrical characterization of ohmic contacts for ULSI devices [J] . A.S. Holland, G.K. Reeves Microelectronics & Reliability . 2000,第6期

机译：ULSI装置欧姆接触的建模和电气特性面临的新挑战
2. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices [J] . A. Redondo-Cubero, M.D. Ynsa, M.F. Romero, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2013,第jula期

机译：快速热退火对GaN基微型器件的Au / Ti / Al / Ti欧姆接触的成分的影响
3. Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN/GaN with varying Ti content [J] . M. W. Fay, G. Moldovan, N. J. Weston, Journal of Applied Physics . 2004,第10期

机译：Ti含量变化的AlGaN / GaN的AuPdAlTi欧姆接触的结构和电特性
4. SPM Electrical Characterization of Ti/Al - Based Ohmic Contacts for Sub-micron Devices [C] . L. Kolaklieva, D. Nesheva, R. Kakanakov, International Conference on Microelectronics . 2010

机译：基于Ti / Al的欧米米装置欧姆触点的SPM电学特性
5. Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations. [D] . Chen, Jen-Sue. 1995

机译：β碳化硅的欧姆接触：电气和冶金特性。
6. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT [O] . Cong Wang, Nam-Young Kim 2012

机译：AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
7. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMT [O] . Cong Wang, Nam-Young Kim 2012

机译：用于AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
8. Spectroscopic, morphological, and electrical characterization of PdGe ohmic contacts to n-GaAs [R] . Howard, A. J. , Lovejoy, M. L. , Zavadil, K. R. , 1994

机译：pdGe欧姆接触到n-Gaas的光谱，形态和电学表征

SPM electrical characterization of Ti/Al — Based ohmic contacts for sub-micron devices

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