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Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT

机译:大面积多孔Trench-IGBT的紧凑电热建模和仿真

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In this contribution we report on electro-thermal modeling and simulation strategy of large area multicellular Trench-IGBT (TIGBT). The proposed solution is based on two coupled systems: a 3D thermal simulator and a 1D electrical (with temperature dependent parameters) physical model of single TIGBT cell. The single cell electrical model has been calibrated to fit the experimental characteristics of a 1200Volt-1000Ampere commercial TIGBT and the influence on the breakdown behaviour of the second order effects has also been included. The unit cell model has been inserted in the 3D thermal simulator and the time dependent thermal maps have been obtained. As a final results we will present electro-thermal simulations in short-circuit condition; the latch-up onset of the parasitic thyristor will be analyzed.
机译:在此贡献中,我们报告了大面积多单元Trench-IGBT(TIGBT)的电热建模和仿真策略。提出的解决方案基于两个耦合系统:单个TIGBT单元的3D热仿真器和1D电气(具有与温度相关的参数)物理模型。已对单电池电模型进行了校准,以适应1200Volt-1000Ampere商业TIGBT的实验特性,并且还包括了对二阶效应的击穿行为的影响。已将晶胞模型插入3D热仿真器中,并获得了与时间有关的热图。作为最终结果,我们将介绍短路条件下的电热模拟。将分析寄生晶闸管的闩锁开始。

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