首页> 外文会议>2010 27th International Conference on Microelectronics Proceedings >Sputtering of ZnO:Ga thin films with the inclined crystalic texture
【24h】

Sputtering of ZnO:Ga thin films with the inclined crystalic texture

机译:溅射具有倾斜晶体织构的ZnO:Ga薄膜

获取原文
获取原文并翻译 | 示例

摘要

In this paper the possibility to form thin films with the inclined crystalic texture by the RF diode sputtering is presented. Two oblique deposition arrangements were used for the preparation of ZnO:Ga thin films with the deviation of their columnar structures in the range of 12 ÷ 15 deg to the substrate normal, i.e. an inclination of their ordinary optical axis. The inclined texture of films has changed their optical transmittance spectra as well as it caused the blue-shift and the change of the optical band-gap.
机译:在本文中,提出了通过射频二极管溅射形成具有倾斜晶体织构的薄膜的可能性。使用两种倾斜沉积装置制备ZnO:Ga薄膜,其柱状结构相对于基板法线的偏离范围为12÷15度,即其普通光轴的倾斜度。薄膜的倾斜质地改变了它们的光透射光谱,并引起了蓝移和光学带隙的变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号