首页> 外国专利> FILM-FORMING METHOD OF CRYSTALLINE ZNO SYSTEM TRANSPARENT CONDUCTIVE THIN FILM, CRYSTALLINE ZNO SYSTEM TRANSPARENT CONDUCTIVE THIN FILM AND FILM, AS WELL AS RESISTANCE FILM TYPE TOUCH PANEL

FILM-FORMING METHOD OF CRYSTALLINE ZNO SYSTEM TRANSPARENT CONDUCTIVE THIN FILM, CRYSTALLINE ZNO SYSTEM TRANSPARENT CONDUCTIVE THIN FILM AND FILM, AS WELL AS RESISTANCE FILM TYPE TOUCH PANEL

机译:结晶Zno系统的透明导电薄膜的成膜方法,结晶Zno系统的透明导电薄膜和电阻膜型触摸屏

摘要

PROBLEM TO BE SOLVED: To provide a film-forming method of a crystalline ZnO system transparent conductive thin film 12 with extremely small changes with the passage of time in the resistance value change on a low-temperature or non-heated substrate 11 in a single cathode pulse sputtering method or a dual cathode pulse sputtering method.;SOLUTION: This is the film-forming method of the crystalline ZnO based transparent conductive thin film in which the duty ratio of impressing power impressed on a target electrode is made 60% or less in the film-forming method of the ZnO based transparent conductive thin film by a single cathode pulse sputtering method, or the duty ratio of the impressing power impressed respectively on the two target electrodes is made 40% or less in the film-forming method of the ZnO based transparent conductive thin film by a dual cathode pulse sputtering method.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种在低温或非加热基板11上的电阻值变化随时间的流逝具有极小的变化的结晶ZnO系统透明导电薄膜12的成膜方法。阴极脉冲溅射法或双阴极脉冲溅射法;解决方案:这是基于ZnO的透明导电薄膜的成膜方法,其中,将目标电极上施加的施加功率的占空比设为60%以下在通过单阴极脉冲溅射法的ZnO基透明导电薄膜的成膜方法中,或者在两个靶电极上分别施加的施加功率的占空比在40%以下。双阴极脉冲溅射法制备ZnO基透明导电薄膜;版权所有:(C)2008,日本特许厅

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