Degradation of p-channel power VDMOSFETs under pulsed NBT stress

机译：脉冲NBT应力下p沟道功率VDMOSFET的性能下降

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Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.

机译：给出了p沟道功率VDMOSFET中脉冲NBT应力引起的阈值电压不稳定性的结果，并将其与静态NBTI结果进行了比较。还提出了用于研究设备的最佳频率和占空比范围。

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《2010 27th International Conference on Microelectronics Proceedings》|2010年|p.443-446|共4页
会议地点 Nis(RS);Nis(RS)
作者
Djoric-Veljkovic S.; Dankovic D.; Prijic A.; Manic I.; Davidovic V.; Golubovic S.; Prijic Z.; Stojadinovic N.;
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Faculty of Civil Engineering and Architecture, University of NiÃu0085Â¡, Aleksandra Medvedeva 14, 18000 NiÃu0085Â¡, Serbia;

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正文语种 eng
中图分类微模组件;
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专利

1. NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions [J] . I. Manic, D. Dankovic, A. Prijic, Microelectronics reliability . 2011,第9a11期

机译：在静态和脉冲NBT应力条件下，p沟道功率VDMOSFET中与NBTI相关的退化和寿命估算
2. Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress [J] . N. Stojadinovic, D. Dankovic, I. Manic, Microelectronics & Reliability . 2010,第9a11期

机译：脉冲NBT应力下p沟道功率VDMOSFET的阈值电压不稳定性
3. NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs [J] . D. Dankovic, I. Manic, S. Djoric-Veljkovic, Microelectronics & Reliability . 2006,第9a11期

机译：p沟道功率VDMOSFET中NBT应力引起的退化和寿命估算
4. Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress [C] . S. Djoric-Veljkovic, D. Dankovic, A. Prijic, International Conference on Microelectronics . 2010

机译：脉冲NBT应力下的P沟道功率VDMOSFET的降解
5. Application of Pattern Recognition Techniques to Aid in Detecting Degradation of a Pulsed Power System [D] . Peachey, Sarah 2018

机译：模式识别技术在脉冲电力系统退化检测中的应用
6. Scaling the productivity of laser structuring processes using picosecond laser pulses at average powers of up to 420 W to produce superhydrophobic surfaces on stainless steel AISI 316L [O] . Sebastian Faas, Uwe Bielke, Rudolf Weber, -1

机译：使用皮秒激光脉冲以高达420 ofW的平均功率扩展激光构造过程的生产率从而在AISI 316L不锈钢上产生超疏水表面
7. Modeling of NBTI degradation in p-channel VDMOSFETs [O] . Nikola Mitrović, Danijel Danković, Zoran Prijić, 2020

机译：P沟道VDMOSFET中NBTI降解的建模
8. Experiments on a High-Vacuum, High-Electric Field Stress Pulsed Power Interface. [R] . Hendricks, K., Henry, J., Shiffler, D., 2005

机译：高真空，高电场应力脉冲电源接口的实验。

Degradation of p-channel power VDMOSFETs under pulsed NBT stress

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