• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2010 27th International Conference on Microelectronics Proceedings >Modeling floating body Z-RAM storage cells
【24h】

Modeling floating body Z-RAM storage cells

机译：建模浮体Z-RAM存储单元

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Advanced floating body Z-RAM memory cells are studied. In particular, the scalability of the cells is investigated. First, a Z-RAM cell based on a 50nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted structures. It is demonstrated that by adjusting the supply source-drain and gate voltages the programming window can be adjusted. The programming window is appropriately large in voltage as well as in current. We further extend our study to a Z-RAM cell based on an ultra-scaled double-gate MOSFET with 12.5nm gate length. We demonstrate that the cell preserves its functionality by providing a wide voltage operating window with large current differences. An appropriate operating window is still observed at approximately 25–30% reduced supply voltage, which is an additional benefit of scaling. The relation of the obtained supply voltage to the one anticipated in an ultimate MOSFET with quasi-ballistic transport is discussed.
机译：研究了先进的浮体Z-RAM存储单元。特别地，研究了小区的可伸缩性。首先，研究了基于50nm栅长双栅结构的Z-RAM单元，该结构对应了最新技术。即使在完全耗尽的结构中，也观察到了Z-RAM操作必不可少的双稳态行为。已经证明，通过调节电源的源极-漏极和栅极电压，可以调节编程窗口。编程窗口的电压和电流都适当大。我们进一步将研究扩展到基于具有12.5nm栅极长度的超大规模双栅极MOSFET的Z-RAM单元。我们证明，该电池通过提供一个宽的电压工作范围和大的电流差来保持其功能。在电源电压降低约25％至30％的情况下，仍然可以观察到适当的工作窗口，这是缩放的另一个好处。讨论了获得的电源电压与最终具有准弹道MOSFET的电源电压之间的关系。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号