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首页> 外文会议>2011 11th Annual Non Volatile Memory Technology Symposium >Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films
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Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

机译：InGaZnO薄膜中的非易失性电阻存储开关行为的研究

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摘要

In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through Pt/IGZO/TiN devices, which perform the unipolar and bipolar behavior while applying bias on Pt and TiN electrode, respectively. In comparison with Ti/IGZO/TiN device, the electrical characteristic of Pt/IGZO/TiN device can be affected by the oxygen content in the sputtering gas mixture of IGZO film. Experimental results demonstrate that the switching behavior is selective by using proper electrode.
机译：在这项研究中，研究了基于溅射沉积IGZO薄膜的电阻型随机存取存储器件的电阻开关特性。 Ti / IGZO / TiN和ITO / IGZO / TiN器件的双极开关行为被视为IGZO薄膜中导电细丝形成/破坏的性能。此外，通过Pt / IGZO / TiN器件研究了电极材料的影响，该器件执行单极和双极行为，同时分别在Pt和TiN电极上施加偏压。与Ti / IGZO / TiN器件相比，Pt / IGZO / TiN器件的电特性会受到IGZO膜溅射气体混合物中氧含量的影响。实验结果表明，通过使用适当的电极，开关行为具有选择性。

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