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NONVOLATILE RESISTANCE CHANGE MEMORY DEVICE INCLUDING A THIN FILM TRANSISTOR CAPABLE OF CONTROLLING A RESISTANCE CHANGE MEMORY CELL
NONVOLATILE RESISTANCE CHANGE MEMORY DEVICE INCLUDING A THIN FILM TRANSISTOR CAPABLE OF CONTROLLING A RESISTANCE CHANGE MEMORY CELL
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机译：非易失性电阻变化存储器，包括能够控制电阻变化存储器单元的薄膜晶体管
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摘要
PURPOSE: A nonvolatile resistance change memory device is provided to change resistance according to the content of Ta by including an active layer with Ta between a top electrode and a bottom electrode.;CONSTITUTION: A bottom electrode(101) is formed on a substrate(100). The bottom electrode is formed by depositing metal or transparent conductive materials. An active layer(102) is formed on the bottom electrode. The active layer is formed by a patterning process after a physical vapor vacuum deposition method and a chemical solution process. A top electrode(103) is formed on the active layer by using transparent conductive oxide.;COPYRIGHT KIPO 2012
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