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Success in Measurement the Lowest Off-state Current of Transistor in the World

机译:成功测量了世界上最低的晶体管断态电流

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摘要

An oxide semiconductor has a wide band gap and low off-state current. We focused on the off-state characteristics of a transistor including an oxide semiconductor and concentrated on measuring the off-state current. We fabricated a circuit TEG that had an In-Ga-Zn-Oxide TFT (IGZO-TFT) with a large channel width of 100,000 μm over a glass substrate and estimated the amount of electric charge flowing through the circuit TEG for a long time. As a result, we discovered that an IGZO-TFT had off-state current as small as 50yA/μm (at 85℃). We are the first to measure off-state current on the order of yA; "y" is the SI prefix representing 10~(-24).
机译:氧化物半导体具有宽带隙和低截止电流。我们专注于包括氧化物半导体的晶体管的关态特性,并专注于测量关态电流。我们在玻璃基板上制作了一个电路TEG,该电路TEG的In-Ga-Zn-氧化物TFT(IGZO-TFT)的通道宽度为100,000μm,并长时间估算流过该电路TEG的电荷量。结果,我们发现IGZO-TFT的关态电流小至50yA /μm(在85℃)。我们是第一个测量yA量级的断态电流的人; “ y”是代表10〜(-24)的SI前缀。

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