首页> 外文会议>2012 7th International Forum on Strategic Technology. >Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma
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Mechanisms and regularities of the vacuum arc macroparticles behavior near and on a substrate, immersed in plasma

机译:浸入等离子体中的衬底附近和衬底上的真空电弧大粒子行为的机理和规律

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It was found that the negative repetitive pulsed biasing of a substrate with respect to the adjacent plasma significantly reduce the MPs content on surface. The decrease of MPs on the negative potential substrate surface is caused by several different physical mechanisms. Up to 10% of macroparticles (MPs) can be repulsed from the plasma-substrate voltage drop after being negatively charged in plasma. The MPs surface density on substrate can be significantly reduced after MPs interaction with negatively biased metal surface. This physical mechanism of negatively charged MPs electrostatic repulsion disappears when tungsten grid is used to create a sheath near the substrate surface. Reduction of MPs surface density almost by half takes a place due to ion sputtering. The decrease of MPs surface density by factor of 12 was achieved after the treatment of substrate for 2 min.
机译:已经发现,相对于相邻等离子体,基板的负重复脉冲偏压显着降低了表面上的MP含量。负电位衬底表面上MP的减少是由几种不同的物理机制引起的。在等离子体中带负电后,最多可将10%的大颗粒(MPs)从等离子体-基底电压降中排斥。 MP与负偏压金属表面相互作用后,可以显着降低基材上MP的表面密度。当使用钨栅在基材表面附近形成护套时,带负电的MPs静电排斥的物理机制消失了。由于离子溅射,MP的表面密度几乎降低了一半。在基材处理2分钟后,MP的表面密度降低了12倍。

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