首页> 外文会议>2012 Asia-Pacific Microwave Conference Proceedings. >Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

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Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

机译：使用在X波段具有5W / mm功率密度的深紫外光刻技术在带有倾斜场板的硅基板上制造AlGaN / GaN高电子迁移率晶体管（HEMT）

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In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100μm² slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz and an output power density of 5.0 W/mm at X-band.

机译：在这项工作中，使用深紫外光刻技术成功地制造了带有倾斜场板的硅上的AlGaN / GaN HEMT。通过使用角度曝光技术，获得了具有倾斜侧壁的亚微米T形栅极。硅衬底上的0.6×100μm^{2 斜场镀AlGaN / GaN HEMT的跨导峰值为214 mS / mm，击穿电压为122V。通过高频测量，该设备的电流增益截止频率（f T ）为24 GHz，最大振荡频率（f max ）为49 GHz，输出功率密度为5.0 W / mm在X波段。}

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来源
《2012 Asia-Pacific Microwave Conference Proceedings.》|2012年|p.941-943|共3页
会议地点 Kaohsiung(CT);Kaohsiung(CT)
作者
Chang Chia-Hua; Hsu Heng-Tung; Huang Lu-Che; Chiang Che-Yang; Chang Edward Yi;
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作者单位

Department of Material Science and Engineering, National Chiao-Tung University, 1001 Tah-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微波与超高频技术;微波与超高频技术;
关键词
AlGaN/GaN; HEMTs; anodic oxide; lithography; slant field plate;

机译：AlGaN / GaN; HEMTs;阳极氧化物;光刻;斜场板;;

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1. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 Wmm~(-1) output power density [J] . Ozaki Shiro, Yaita Junya, Yamada Atsushi, Applied physics express . 2021,第4期

机译：X波段AlGaN / GaN高电子迁移率晶体管的首先使用自由静态AlN基板在15WMM〜（-1）输出功率密度
2. Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation [J] . Jong-Wook Lee, Almaz S. Kuliev, Ilesanmi Adesida Japanese journal of applied physics . 2008,第3issue1期

机译：用于X波段大功率工作的短沟道AlGaN / GaN场效应高电子迁移率晶体管
3. Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates [J] . Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, _Applied Physics Express . 2014,第9期

机译：倾斜场板可改善AlGaN / GaN高电子迁移率晶体管的击穿电压和RF特性
4. Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band [C] . Chang Chia-Hua, Hsu Heng-Tung, Huang Lu-Che, Asia-Pacific Microwave Conference . 2012

机译：使用深紫外光刻在X频带中具有倾斜场板的硅基板上的AlGaN / GaN高电子迁移率晶体管（HEMT）的制造，其特征在于X波段5W / mm功率密度
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations [O] . H.-P. Lee, J. Perozek, L. D. Rosario, -1

机译：使用不同缓冲层配置的200mm硅（111）衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
7. The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate [O] . H.Y. Wang, H.C. Chiu, W.C. Hsu, 2020

机译：ALXGA1-XN背屏对六英寸MCZ SI衬底上的AlGaN1-XN后屏对六英寸MCZ Si衬底的影响
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

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