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GaN HEMT GaN power High Electron Mobility Transistor power amplifier
GaN HEMT GaN power High Electron Mobility Transistor power amplifier
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机译：GaN HEMT GaN功率高电子迁移率晶体管功率放大器
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摘要
The present invention relates to a GaN high electron mobility transistor, an input matching network for matching an input impedance to an element impedance, an output matching network for matching an output impedance and an element impedance, and a GaN high electron mobility transistor for driving the GaN high electron mobility transistor. A bias sequencer for supplying negative power to the gate of the GaN high electron transfer transistor first and then sequentially supplying a positive power supply to the drain of the GaN high electron transfer transistor, a bias sequencer for sequentially supplying a negative power to the gate of the GaN high electron transfer transistor And a second electronic device for supplying a positive power source to the drain of the GaN high electron mobility transistor in accordance with the operation of the bias sequencer, wherein the first electronic device is connected to the gate of the GaN high electron mobility transistor And the second electric field And a bias sequencing circuit in which a magnetic field element is connected to a drain of the GaN high electron mobility transistor, the size reduction and the bias sequencing circuit being provided outside the GaN high electron mobility transistor Existing problems) can be prevented and stability can be improved.
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