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Selectively grown Carbon Nanotubes (CNTs): Characterization and field emission properties

机译:选择性生长的碳纳米管(CNT):表征和场发射特性

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These Carbon Nanotubes (CNTs) are considered as one of the promising electron-emitting materials available for use in cold cathode applications such as vacuum microelectronic devices. It has been shown that due to the high aspect ratio (small diameter and relatively long length) it is possible to obtain electron emission at a relatively low applied electric field. Because of this property, CNTs may play an important role when used as cold cathode material in plasma devices. In this work, the experimental results of field emission characteristics of CNTs fabricated using Chemical Vapor Deposition (CVD) are presented. The samples are selectively grown randomly oriented multi-walled CNTs (MWNTs) and synthesize onto plain silicon (n-type 100) substrates. A thin catalyst (Fe) film is first deposited by DC magnetron sputtering and high-quality films of MWNTs are grown in a thermal CVD furnace in a mixture of acetylene and argon gasses, after lithographic lift-off patterning of a metal catalyst layer on the wafer. The measurement results indicate that randomly oriented CNTs have significant field emission capabilities to be used as cold cathode emitters in plasma devices.
机译:这些碳纳米管(CNT)被认为是可用于冷阴极应用(如真空微电子设备)的有前途的电子发射材料之一。已经表明,由于高纵横比(小直径和相对长的长度),可以在相对低的施加电场下获得电子发射。由于这种特性,CNT在等离子体设备中用作冷阴极材料时可能起重要作用。在这项工作中,介绍了使用化学气相沉积(CVD)制备的CNT的场发射特性的实验结果。将样品选择性地生长成随机取向的多壁CNT(MWNT),并合成到普通硅(n型100)衬底上。首先通过直流磁控溅射沉积薄催化剂(Fe)膜,然后在热CVD炉中在乙炔和氩气的混合物中生长高质量的MWNTs膜,然后对金属催化剂层进行光刻剥离图案化。硅片。测量结果表明,随机取向的CNT具有显着的场发射能力,可用作等离子体装置中的冷阴极发射极。

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