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首页> 外文会议>2012 IEEE Photonics Conference. >Blue single photon emission from a single InGaN/GaN quantum dot in nanowire up to 200K
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Blue single photon emission from a single InGaN/GaN quantum dot in nanowire up to 200K

机译：来自纳米线中单个InGaN / GaN量子点的蓝色单光子发射高达200K

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摘要

Short wavelength single photon sources are useful for quantum optical devices, in particular for applications such as free space quantum cryptography. Semiconductor quantum dots (QDs) have proven to be ideal for the generation of single photons and single photon sources have been demonstrated with InAs, InP, ZnSe and GaN quantum dots at temperatures ranging from 4K to 300K.1–4 GaN nanowires with InGaN disks inserted in them have been successfully grown on (001) and (111) Si by us and other groups.5–7 By shrinking the diameter of these nanowires to 15–20nm, the disks electronically behave like quantum dots. The optical emission from the InGaN dots can be varied over a wide range of the visible spectrum by varying the In composition. We report here, single photon emission at λ=403nm (blue) from a single InGaN dot in a GaN nanowire at 200K.
机译：短波长单光子源可用于量子光学设备，特别是用于诸如自由空间量子密码学的应用。事实证明，半导体量子点（QD）是产生单光子的理想选择，并且在4K至300K的温度范围内，InAs，InP，ZnSe和GaN量子点已证明了单光子源。 1-4 插入有InGaN圆盘的GaN纳米线已被我们和其他组织成功地在（001）和（111）Si上生长。 5-7 通过将这些纳米线的直径缩小到15-20nm ，磁盘的电子行为就像量子点。通过改变In组成，可以在可见光谱的宽范围内改变InGaN点的发光。我们在这里报告，来自GaN纳米线中200K的单个InGaN点在λ= 403nm（蓝色）处的单光子发射。

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