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首页> 外文会议>2012 IEEE Student Conference on Research and Development >Development of electrical test setup for microfluidic field effect transistor
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Development of electrical test setup for microfluidic field effect transistor

机译：开发微流场效应晶体管的电气测试装置

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摘要

This paper reports on the development of the electrical test setup for microfluidic field effect transistor (FET). Testing of the device commences during the fabrication process where various resistivity, grown layer thickness and other parameters are measured. However, these limited measurements do not give insights towards the final device performance. The final test is purely electrical and therefore a high current circuit to manually test the transistor characteristic of the microfluidic FET has been designed. The IV characteristic of the known metal oxide semiconductor field effect transistor (MOSFET) that is available in the market is the basis of the circuit design which is then used to characterize the microfluidic FET. Experimental results reveal the electrical responses from the test setup are consistent with the MOSFET behavior and an alternative method for the microfluidic FET characterization.
机译：本文报告了微流场效应晶体管（FET）的电气测试装置的发展情况。器件的测试在制造过程中开始，在该过程中将测量各种电阻率，生长层厚度和其他参数。但是，这些有限的测量值无法提供有关最终设备性能的见解。最终测试是纯电气的，因此已经设计了一个大电流电路来手动测试微流体FET的晶体管特性。市场上可买到的已知金属氧化物半导体场效应晶体管（MOSFET）的IV特性是电路设计的基础，然后将其用于表征微流体FET。实验结果表明，来自测试装置的电响应与MOSFET行为和微流FET表征的另一种方法一致。

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