首页> 外国专利> A field effect transistor comprising a gold layer, a microfluidic device comprising the field effect transistor and a method of detecting an analyte having a thiol group using the field effect transistor and microfluidic device

A field effect transistor comprising a gold layer, a microfluidic device comprising the field effect transistor and a method of detecting an analyte having a thiol group using the field effect transistor and microfluidic device

机译:包括金层的场效应晶体管,包括该场效应晶体管的微流体器件以及使用该场效应晶体管和微流体器件检测具有硫醇基的分析物的方法

摘要

A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
机译:用于检测具有硫醇基的分析物的场效应晶体管包括:衬底;在衬底上彼此分开地形成的源极区和漏极区,该源极区和漏极区被掺杂,使得源极和漏极的极性与衬底的极性相反的区域,设置在源极区域和漏极区域之间的沟道区域,由电绝缘材料形成并设置在沟道区域上的绝缘层,设置在绝缘层上的金层和参考电极与金层分开设置。

著录项

  • 公开/公告号KR101195612B1

    专利类型

  • 公开/公告日2012-10-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060032413

  • 申请日2006-04-10

  • 分类号H01L21/66;H01L21/335;H01L29/78;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:20

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