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首页> 外文会议>2012 IEEE Student Conference on Research and Development >Influence of post heat treatment to the properties of ZnO thin film prepared by RF magnetron sputtering
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Influence of post heat treatment to the properties of ZnO thin film prepared by RF magnetron sputtering

机译：后热处理对射频磁控溅射制备ZnO薄膜性能的影响

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The influence of post heat treatment on ZnO thin films prepared by RF magnetron sputtering was reported. The effect of ZnO thin films post heat treatment were varies from 300°C to 550°C had been investigated. The thin films were examined using two point probe current-voltage (I–V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emission scanning electron microscopy (FESEM) (JEOL JSM 7600F). The current-voltage (I–V) measurements indicated that the conductivity of post heat treatment temperature of 500°C give the optimum conductivity. All films exhibited high UV absorption (300∼380nm) properties and had low absorbance in visible and near infrared (IR) (380∼1200nm) region that obtained from UV-Vis-NIR spectrophotometer measurement. The observed image from FESEM shows an increase of the nanocolumnar size, as the post heat treatment increases.
机译：报道了后热处理对通过射频磁控溅射制备的ZnO薄膜的影响。研究了ZnO薄膜在热处理后的效果，温度从300°C到550°C不等。使用两点探针电流-电压（IV）测量（Keithley 2400），UV-Vis-NIR分光光度计，场发射扫描电子显微镜（FESEM）（JEOL JSM 7600F）检查薄膜。电流-电压（IV）测量表明，热处理后温度为500°C时的电导率可获得最佳电导率。所有膜均表现出高的UV吸收（300-380nm）特性，并且在通过UV-Vis-NIR分光光度计测量获得的可见和近红外（IR）（380-1200nm）区域中具有低吸收率。从FESEM观察到的图像显示，随着后热处理的增加，纳米柱的尺寸增加。

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