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METHOD FOR FABRICATING ZNO THIN FILM DOPED WITH METAL USING MAGNETRON CO-SPUTTERING
METHOD FOR FABRICATING ZNO THIN FILM DOPED WITH METAL USING MAGNETRON CO-SPUTTERING
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机译：磁控共溅射制备掺杂金属的ZNO薄膜的方法
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摘要
A method for fabricating a ZnO thin film which is doped with metal and has improved crystallization, surface shape, electrical characteristics and permeability using magnetron co-sputtering is provided. A method for fabricating a ZnO thin film doped with metal using magnetron co-sputtering comprises the steps of: depositing the ZnO thin film doped with metal on a substrate using magnetron co-sputtering such that an RF electric power ratio represented by the mathematical expression, R=[RF electric power relative to a metal doped ZnO target]/[RF electric power relative to a non-doped ZnO target], becomes 0.5 to 1.5; and subjecting the ZnO thin film doped with metal to post-heat treatment. The R value is 0.9 to 1.1. The step of depositing the ZnO thin film doped with metal on the substrate comprises the step of using magnetron co-sputtering on a ZnO target that is doped with a metal element and a ZnO target that is not doped with the metal element. The metal is any one of B, Al, Ga and In.
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机译：提供了一种使用磁控共溅射制造掺杂有金属并具有改善的结晶，表面形状，电特性和磁导率的ZnO薄膜的方法。一种使用磁控管共溅射制造掺杂有金属的ZnO薄膜的方法，包括以下步骤：使用磁控管共溅射将掺杂有金属的ZnO薄膜沉积在基板上，以使数学表达式表示的RF功率比， R ＝ [相对于金属掺杂的ZnO靶的RF功率] / [相对于非掺杂的ZnO靶的RF功率]为0.5〜1.5。对掺杂金属的ZnO薄膜进行后热处理。 R值为0.9至1.1。在基板上沉积掺杂有金属的ZnO薄膜的步骤包括以下步骤：在掺杂有金属元素的ZnO靶和未掺杂金属元素的ZnO靶上使用磁控管共溅射。金属是B，Al，Ga和In中的任何一种。
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