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首页> 外文会议>2013 Abstracts IEEE International Conference on Plasma Science >20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications
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20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

机译：20 kV，2 cm 2 ，4H-SiC栅极关断晶闸管，用于高级脉冲功率应用

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The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities. The 4H-SiC GTO also exhibits lower forward voltage drop than the IGBT-based switches, resulting in lower losses during normal operation. It is an ideal switch for pulsed power applications that require high turn-on di/dt. In order to achieve a blocking capability of or greater than 20 kV in SiC, a thick drift epi-layer (> 160 μm) with an improved carrier lifetime (5 ∼ 10 μs) is necessary to obtain a full conductivity modulation. In this paper, for the first time to our knowledge, we report our recently developed 1×2 cm2, 20 kV, 4H-SiC p-GTO using a 160 μm, 2×1014/cm3 doped, p-type drift layer. The active conducting area of the device is 0.53 cm2. Due to the limitations of the high-voltage test set-up, the 4H-SiC p-GTO showed an on-wafer gate-to-anode blocking voltage of 19.9 kV at a leakage current of 1 μA, which corresponds to a one-dimensional (1D) maximum electrical field of ∼ 1.5 MV/cm at room-temperature. To measure this large area, 4H-SiC, p-GTO at high current levels (> 100 A/cm2), the forward characteristics of the device were evaluated using a Tektronix 371 curve tracer in pulse mode. A differential specific on-resistance of 11 MΩ-cm2 was obtained at a gate current of 0.35 A and a high current of 300 A/cm2 ∼ 400 A/cm2. More results and discussion will be presented at the conference.
机译：基于宽带隙半导体的高压功率器件（例如碳化硅（SiC））的开发由于其在高温应用中的材料性能优于硅，因此备受关注。在高压SiC功率器件中，4H-SiC栅极关断晶闸管（GTO）具有出色的电流处理能力，极高的电压阻断能力和快速关断能力。 4H-SiC GTO还具有比基于IGBT的开关更低的正向压降，从而在正常工作期间具有更低的损耗。它是要求高导通di / dt的脉冲功率应用的理想开关。为了在SiC中实现20 kV或大于20 kV的阻挡能力，必须具有厚的漂移外延层（> 160μm）和更长的载流子寿命（5〜10μs），才能获得完全的电导率调制。在本文中，据我们所知，我们首次报告了我们最近开发的使用160μm，2×10 的1×2 cm 2 ，20 kV，4H-SiC p-GTO 14 / cm 3 掺杂的p型漂移层。该设备的有效导电面积为0.53 cm 2 。由于高压测试装置的局限性，在泄漏电流为1μA时，4H-SiC p-GTO在晶片上的栅极到阳极阻断电压为19.9 kV，相当于一个室温下的一维（1D）最大电场约为1.5 MV / cm。为了在高电流水平（> 100 A / cm 2 ）下测量这种大面积的4H-SiC，p-GTO，使用Tektronix 371曲线示踪器以脉冲模式评估了该器件的前向特性。在0.35 A的栅极电流和300 A / cm 2 〜400 A / cm的高电流下获得11MΩ-cm 2 的差分比导通电阻 2 。更多的结果和讨论将在会议上进行。

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