Self-consistent quasi static CV characterization of InxGa1#x2212;xSb buried channel n-MOSFET

机译：InxGa1-xSb掩埋沟道n-MOSFET的自洽准静态CV表征

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The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended on some important process parameters like oxide thickness, channel thickness, channel composition and temperature for buried channel InGaSb n-MOSFET.

机译：使用SILVACO的ATLAS器件仿真软件包，研究了埋沟道n-InGaSb MOSFET的准静态电容-电压（CV）特性。考虑波函数穿透和应变效应，采用自洽方法求解耦合的一维Schrödinger-Poisson方程。发现CV曲线和阈值电压很大程度上取决于一些重要的工艺参数，例如掩埋沟道InGaSb n-MOSFET的氧化物厚度，沟道厚度，沟道组成和温度。

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来源
《2013 IEEE 5th International Nanoelectronics Conference.》|2013年|p.94-96|共3页
会议地点 Singapore(SG);Singapore(SG)
作者
Islam Muhammad Shaffatul; Alam Md. Nur Kutubul; Islam Md. Rafiqul;
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作者单位

Department of Electrical and Electronic Engineering, Khulna University of Engineering Technology, Khulna-9203, Bangladesh;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
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2. Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating [J] . Ohguro T., Sugiyama N. IEEE Transactions on Electron Devices . 1998,第3期

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3. Self-consistent quasi-static radial transport during the substorm growth phase [J] . Le Contel O., Roux A., Pellat R. Journal of Geophysical Research. Biogeosciences . 2000,第A6期

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4. Self-consistent quasi static CV characterization of InxGa1#x2212;xSb buried channel n-MOSFET [C] . Islam Muhammad Shaffatul, Alam Md. Nur Kutubul, Islam Md. Rafiqul IEEE International Nanoelectronics Conference . 2013

机译：INXGA1＆＃x2212的自我一致的准静态CV表征; XSB埋地通道N-MOSFET
5. The design of linear space-time codes for quasi-static flat -fading channels [D] . Varadarajan, Badri 2004

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Self-consistent quasi static CV characterization of InxGa1#x2212;xSb buried channel n-MOSFET

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