Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions

机译：Fe2CrSi Heusler合金的结构和磁性能及其磁隧道结的隧道磁阻

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We report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe2CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400^oC. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.

机译：我们报道了外延生长的Fe 2 CrSi薄膜的磁性能，微观结构和表面形态。通过在室温下沉积，然后在400℃退火，获得高度有序的B2膜。使用Fe 2 CrSi的磁性隧道结显示出2.5％的隧道磁阻（TMR）。低TMR归因于与MgO界面处的Fe 2 CrSi的氧化。通过在Fe 2 CrSi和MgO之间插入0.3nm的Mg以防止Fe 2 CrSi的氧化，可将TMR提高到8.1％。

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来源
《2013 IEEE 5th International Nanoelectronics Conference.》|2013年|p.215-218|共4页
会议地点 Singapore(SG);Singapore(SG)
作者
Wang Yu-Pu; Qiu Jin-Jun; Lu Hui; Yap Qi-Jia; Wang Wen-Hong; Han Gu-Chang; Ngo Duc-The; Teo Kie-Leong;
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作者单位

Department of Electrical and Computer Engineering, Advanced Memory Laboratory, National University of Singapore, 4 Engineering Drive 3, Singapore 117583;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
关键词
Feinf2/infCrSi; Heusler alloy; MTJ; TMR; half metal;

机译：Fe 2 CrSi;赫斯勒合金; MTJ; TMR;半金属;;

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专利

1. Tunnel magnetoresistance effect and interface study in magnetic tunnel junctions using epitaxial Fe2CrSi Heusler alloy electrode [J] . Wang, Yu-Pu, Han, Journal of Applied Physics . 2013,第1期

机译：Fe2CrSi Heusler合金电极在磁性隧道结中的隧道磁阻效应和界面研究
2. Tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy thin film of Co_2Cr_(0.6)Fe_(0.4)Al and a MgO tunnel barrier [J] . Takao Marukame, Masafumi Yamamoto Journal of Applied Physics . 2007,第8期

机译：Co_2Cr_（0.6）Fe_（0.4）Al全Heusler合金薄膜和MgO隧道势垒的全外延磁性隧道结中的隧道磁阻
3. Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co_2MnGe and a MgO tunnel barrier [J] . Shinya Hakamata, Takayuki Ishikawa, Takao Marukame, Journal of Applied Physics . 2007,第9Pt2期

机译：Co_2MnGe Heusler合金薄膜和MgO隧道势垒的磁性隧道结的改善的隧道磁阻特性
4. Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions [C] . Wang Yu-Pu, Qiu Jin-Jun, Lu Hui, IEEE International Nanoelectronics Conference . 2013

机译：Fe2crsi Heusler合金的结构和磁性和其磁隧道结的隧道磁阻
5. Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes. [D] . Xiang, Hua. 2011

机译：用新型铁磁电极设计和表征逆隧穿磁阻磁隧道结。
6. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy [O] . Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, -1

机译：具有高垂直磁各向异性的亚铁磁Heusler化合物中的终止层补偿隧穿磁阻
7. Characterization of Local Magnetic Properties in Co2MnSn Heusler Alloy Films and Magnetoresistance of Co2MnSn-Based Magnetic Tunnel Junctions [O] . D. Gondo, Y. Sakai, T. Fujita, 2009

机译：CO2MNSN Heusler合金膜中局部磁性特性的表征及CO2MNSN磁隧道结的磁阻

Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions

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