Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate

机译：SiC衬底上亚微米级TiO2基AlGaN / GaN MOSHEMT的特性

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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with thick (>30 nm), high-κ (TiO2/NiO), submicron-footprint (0.4 µm) gate dielectric on SiC substrate are demonstrated, which are found to exhibit low gate leakage current (∼ 1 nA/mm of gate periphery), high IMAX (1 A/mm), and high drain breakdown voltage (188 V). The derived current gain cutoff frequency is 30 GHz (from S-parameter measurements). The output power density is 6.6 W/mm, and the associated power-added-efficiency is 46% at 2.5 GHz frequency and 50 V drain bias. This high performance submicron-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems.

机译：AlGaN / GaN金属氧化物半导体高电子迁移率晶体管（MOSHEMT），具有厚（> 30 nm），高κ（TiO 2 / NiO），亚微米封装（0.4 µm）栅极电介质演示了SiC衬底，发现它具有较低的栅极漏电流（约1 nA / mm的栅极周边），较高的I MAX （1 A / mm）和较高的漏极击穿电压（188 V））。导出的电流增益截止频率为30 GHz（根据S参数测量）。在2.5 GHz频率和50 V漏极偏置下，输出功率密度为6.6 W / mm，相关的功率附加效率为46％。这种高性能的亚微米级MOSHEMT在通信和雷达系统中的微波功率放大器应用中非常有前途。

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来源
《2013 IEEE International Conference of Electron Devices and Solid-State Circuit》|2013年|1-2|共2页
会议地点 Hong Kong(HK)
作者
Meng Di; Lin Shuxun; Wen Cheng P.; Wang Maojun;
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作者单位

Institute of Microelectronics, Peking University, Beijing 100871, Chinac;

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原文格式 PDF
正文语种 eng
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关键词
AlGaN/GaN; SiC; metal-oxide-semiconductor high electron mobility transistor (MOSHEMT); power density; submicron-footprint;

机译：AlGaN / GaN; SiC;金属氧化物半导体高电子迁移率晶体管（MOSHEMT）;功率密度;亚微米封装;;

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专利

1. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers [J] . T R LENKA, A K PANDA Pramana . 2012,第1期

机译：SiC衬底上基于AlGaN / GaN的HEMT，用于使用不同钝化层的微波特性
2. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers [J] . A K Panda, T R Lenka1 Pramana . 2012,第1期

机译：SiC衬底上的基于AlGaN / GaN的HEMT，用于使用不同钝化层的微波特性
3. DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric [J] . Hong Zhou, Xiabing Lou, Karynn Sutherlin, IEEE Electron Device Letters . 2017,第10期

机译：深亚微米T型栅和原子层外延MgCaO作为栅介质的AlGaN / GaN / SiC MOSHEMT的DC和RF性能
4. Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate [C] . Meng Di, Lin Shuxun, Wen Cheng P., IEEE International Conference of Electron Devices and Solid-State Circuit . 2013

机译：基于亚微米脚印TiO2的Algan / GaN MoShemt在SiC衬底上的特征
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
7. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance [O] . Jun Ma, Catherine Erine, Peng Xiang, 2018

机译：多通道三门正常开/关AlGaN / GaN MOSHEMTS在SI基板上具有高击穿电压和低电阻低

Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate

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