DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric

著录项

• 来源
  《IEEE Electron Device Letters》 |2017年第10期|1409-1412|共4页
• 作者

  Hong Zhou; Xiabing Lou; Karynn Sutherlin; Jarren Summers; Sang Bok Kim; Kelson D. Chabak; Roy G. Gordon; Peide D. Ye;

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• 作者单位

  School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA;

  Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA;

  Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, USA;

  Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, USA;

  Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA;

  Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, USA;

  Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA;

  School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Gallium nitride; Logic gates; Aluminum gallium nitride; Wide band gap semiconductors; Epitaxial growth; HEMTs; MODFETs;

  机译：氮化镓;逻辑门;氮化铝镓;宽带隙半导体;外延生长;HEMT;MODFET;