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Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

机译：自对准aLD alOx T栅极绝缘体，用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制

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A proof-of-concept metal-insulator-semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially- deposited AlOx dielectric and Ni/Au gate metal layers. By keeping the temperature low (100 C) during the atomic-layer deposition (ALD) of AlOx, reflow of the photoresist pattern was prevented, which maintained the integrity of its re-entrant profile. After lift-off, the resulting transistor gate had a T-shaped profile with AlOx directly under the gate metal only. In a split wafer comparison, this experimental structure reduced reverse-bias gate leakage current after passivation by one to two orders of magnitude over Schottky gate devices. Plasma-enhanced chemical vapor deposition (PECVD) SiNx passivation of the exposed AlGaN surface access regions of AlOx-insulated gate devices was found to produce pulsed i-V improvements that are similar to those observed in passivated Schottky gate devices. This fabrication technique has been successfully used to demonstrate insulated gate devices with gate lengths (LG) as short as 160 nm with fT = 35 GHz and fmax = 77 GHz small-signal performance. Substantial output conductance and fT LG product roll-off were observed at short gate lengths for both AlOx-insulated and Schottky gate devices.

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年度 2010
页码 p.1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium nitrides ; High electron mobility transistors ; Aluminum gallium nitrides ; Leakage(Electrical) ; Schottky barrier devices ; Photoresistors ; Electrical insulation ; Wafers ; Chemical vapor deposition ; Gates(Circuits) ; Silicon nitrides;

机译：氮化镓;高电子迁移率晶体管;氮化铝镓;漏电（电气）;肖特基势垒器件;光敏电阻器;电绝缘;晶片;化学气相沉积;栅极（电路）;氮化硅;

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1. Self-aligned ALD AlO_x T-gate insulator for gate leakage current suppression in SilVpassivated AlGaN/GaN HEMTs [J] . David J. Meyer, Robert Bass, D. Scott Katzer, Solid-State Electronics . 2010,第10期

机译：自对准ALD AlO_x T栅极绝缘体，用于抑制SilV钝化的AlGaN / GaN HEMT中的栅极泄漏电流
2. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator [J] . Wang Zheli, Zhou Jianjun, Kong Yuechan, Journal of Semiconductors . 2015,第9期

机译：使用ALD Al_2O_3作为栅绝缘体的薄势垒增强模式AlGaN / GaN MIS-HEMT
3. Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface [J] . Hong S.K., Shim K.H., Yang J.W. Electronics Letters . 2008,第18期

机译：通过AlGaN表面的氧钝化减少AlGaN / GaN HEMT中的栅极泄漏电流
4. Self-aligned ALD AlOx T-gate footprint insulator for gate leakage current suppression in SiNx passivated AlGaN/GaN HEMTs [C] . International Semiconductor Device Research Symposium . 2009

机译：自对齐ALD ALO X T型栅极足迹绝缘体用于栅极泄漏电流抑制SIN X 钝化的Algan / GaN Hemts
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

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