REDUCING METHOD FOR GATE LEAKAGE CURRENT OF ALGAN/GAN HEMTS

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• 3. AlGaN/GaN HEMT Reducing Method for Gate Leakage Current of AlGaN/GaN HEMTs [P] . 韩国专利： KR101683470B1 . 2016-12-07

  机译： 降低AlGaN / GaN HEMT的栅极漏电流的AlGaN / GaN HEMT方法

• 4. Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device [P] . US11043574B2 . 2021-06-22

  机译： 用闸门漏电流和HEMT装置制造HEMT装置的方法

• 5. METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CURRENT, AND HEMT DEVICE [P] . US2021313446A1 . 2021-10-07

  机译： 用闸门漏电流和HEMT装置制造HEMT装置的方法

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• 2. Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs [J] . Changxi Chen ,Quan Wang ,Wei Li . 半导体学报:英文版 . 2021,第9期
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