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Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer
Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer
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机译：具有与c-AlGaN覆盖层绝缘的栅电极的常关立方相GaN（c-GaN）HEMT
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摘要
A normally-off, heterojunction field effect transistor includes an intrinsic cubic-phase gallium nitride (c-GaN) substrate and an aluminum gallium nitride (AlGaN) capping layer disposed on the intrinsic c-GaN substrate. The AlGaN capping layer includes a first sublayer of intrinsic c-phase AlxGa1-xN disposed on the c-GaN substrate, wherein the first sublayer is of a first thickness; a second sublayer of doped c-phase AlxGa1-xN disposed on the first sublayer, and wherein the second sublayer is of a second thickness and is doped with a dopant. An insulating layer is disposed on the AlGaN capping layer, wherein the insulating layer is of a fourth thickness. A source electrode, a drain electrode, and a gate electrode are positioned adjacent to and on top of the insulating layer, respectively.
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机译：常关的异质结场效应晶体管包括本征立方相氮化镓（c-GaN）衬底和设置在本征c-GaN衬底上的氮化铝镓（AlGaN）覆盖层。 AlGaN覆盖层包括设置在c-GaN衬底上的本征c相Al x Ga 1-x N的第一子层，其中第一子层是第一厚度;设置在第一子层上的掺杂的c相Al x Ga 1-x N的第二子层，其中第二子层具有第二厚度并掺杂有掺杂物。绝缘层设置在AlGaN覆盖层上，其中绝缘层具有第四厚度。源电极，漏电极和栅电极分别与绝缘层相邻并位于其上方。
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