Dielectric response of ferroelectric thin films with full and partial depletion

机译：完全耗尽和部分耗尽的铁电薄膜的介电响应

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We studied the dielectric response of metal/ferroelectric/metal thin films capacitors with low to moderate densities of n-type impurities. Using the Landau-Ginzburg-Devonshire formalism for ferroelectrics, equations of semiconductors and electrostatics, we show how partially depleted films can generate a higher dielectric constant than those fully depleted but having the same impurity density. Such a thickness dependence trend is just the inverse of what is expected from films with low or no impurities. The results are provided for (001) BaTiO3 films grown on (001) SrTiO3 substrates with pseudomorphic Pt top and bottom metallic electrodes.

机译：我们研究了具有低至中等密度n型杂质的金属/铁电/金属薄膜电容器的介电响应。将Landau-Ginzburg-Devonshire形式主义用于铁电体，半导体和静电方程，我们展示了部分耗尽的膜如何比完全耗尽但具有相同杂质密度的膜产生更高的介电常数。这种厚度依赖性趋势恰好与杂质少或无杂质的薄膜相反。提供了在具有假晶Pt顶部和底部金属电极的（001）SrTiO3衬底上生长的（001）BaTiO3膜的结果。

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来源
《2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy》|2013年|26-29|共4页
会议地点 Prague(CZ)
作者
Misirlioglu I.B.; Yildiz M.;
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作者单位

Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul, Turkey;

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原文格式 PDF
正文语种 eng
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关键词
Ferroelectric thin films; defects; interfaces; phase transition; semiconductors;

机译：铁电薄膜;缺陷;界面;相变;半导体;;

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专利

1. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect [J] . Misirlioglu I. B., Yildiz M. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第12期

机译：完全和部分耗尽的铁电薄膜的介电响应和厚度效应的反演
2. Strain-Mediated Substrate Effect on the Dielectric and Ferroelectric Response of Potassium Sodium Niobate Thin Films [J] . Alexander Tkach, André Santos, Sebastian Zlotnik, Coatings . 2018,第12期

机译：应变介质对铌酸钾钠薄膜介电和铁电响应的影响
3. Effect of dielectric layer on ferroelectric responses of P(VDF-TrFE) thin films [J] . Mai Manfang, Zhu Chuanyun, Liu Guohua, Physics Letters, A . 2018,第34期

机译：介电层对P（VDF-TRFE）薄膜铁电反应的影响
4. Dielectric response of ferroelectric thin films with full and partial depletion [C] . I. B. Misirlioglu, M. Yildiz IEEE International Symposium on Applications of Ferroelectrics . 2013

机译：具有完全和部分耗尽的铁电薄膜的介电响应
5. Dielectric and Ferroelectric Properties of Lead Lanthanum Zirconate Titanate Thin Films for Capacitive Energy Storage. [D] . Tong, Sheng. 2012

机译：锆钛酸铅镧铅薄膜的介电和铁电性质，用于电容储能。
6. Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong [O] . An Quan Jiang, Xiang Jian Meng, David Wei Zhang, -1

机译：铁电薄膜中的巨介电常数：畴壁Ping Pong
7. Dielectric and ferroelectric response of sol-gel derived $Pb_{0.85}La_{0.15}TiO{_3}$ ferroelectric thin films on different bottom electrodes [O] . Bhaskar S, Majumder SB, Dobal PS, 2002

机译：溶胶-凝胶衍生的$ Pb_ {0.85} La_ {0.15} TiO {_3} $铁电薄膜在不同底部电极上的介电和铁电响应

Dielectric response of ferroelectric thin films with full and partial depletion

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