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首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >PLD elaboration of piezoelectric ZnO thin film for 540 MHz Al/ZnO/Pt bulk acoustic wave resonator
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PLD elaboration of piezoelectric ZnO thin film for 540 MHz Al/ZnO/Pt bulk acoustic wave resonator

机译：540 MHz Al / ZnO / Pt体声波谐振器的压电ZnO薄膜的PLD制作

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摘要

The ZnO thin films in Al/ZnO/Pt/Ti/SiO2/Si Bulk Acoustic Wave (BAW) resonators are realized by a reactive Pulsed Laser Deposition (PLD) technique. It is of most interest to improve their piezoelectric characteristics. These later are intimately linked to the microstructure, the texture and the growth conditions. In this work, the piezoelectric characteristics of ZnO thin films have been investigated. Wurtzite ZnO thin films were prepared on Pt(111) at different substrate temperatures (100–500 °C). The 200 nm of Pt on 20 nm Ti were prepared by Electron Beam Deposition (EBD) technique at room temperature on 2 µm SiO2 substrate. This SiO2 film has been realized by Silicon wet thermal oxidation step at 1100 °C. The top electrode of the BAW was made by thermal evaporation of Aluminum; the piezoelectric film was confined in a circle of 1.8 mm radius. X-Ray Diffraction (XRD) characterization showed that the deposited Pt (bottom electrode) has (111) preferential orientation. It also showed that the ZnO films were c-axis (002) oriented. The Scanning Electron Microscopy (SEM) of the realized ZnO thin films showed evidence of compact grains with honeycomb-like structure on surface and evidence of columnar structure on cross-section. The measurements indicate that all substrate temperatures are suitable to obtain a good quality of ZnO, but Ts=300 °C is the optimum. In order to evaluate the piezoelectric properties of the BAW, measurements of the electrical input impedance and admittance have been performed. They showed evidence of piezoelectric response. The resonance frequency was obtained at 524.5 MHz and the anti-resonance frequency at 540.9 MHz. The electromechanical coupling coefficient Keff2 was evaluated to be 7.26 %, which is an indicator of a good piezoelectric response. From this measured values, the thickness d and the wave velocity Vp in the ZnO slab- were deduced to be respectively 6.15 µm and 6451.35 m/s and the piezoelectric constant ℯ33 was found to be equal to 1.21 C/m2.
机译：Al / ZnO / Pt / Ti / SiO2 / Si体声波（BAW）谐振器中的ZnO薄膜通过反应性脉冲激光沉积（PLD）技术实现。改善它们的压电特性是最令人感兴趣的。这些后来与微观结构，质地和生长条件密切相关。在这项工作中，已经研究了ZnO薄膜的压电特性。在不同的衬底温度（100–500°C）下，在Pt（111）上制备纤锌矿型ZnO薄膜。在室温下，通过电子束沉积（EBD）技术在2 µm SiO2基板上制备200 nm Pt上200 nm的Pt。该SiO 2膜已经通过硅湿热氧化步骤在1100℃下实现。 BAW的顶部电极是通过热蒸发铝制成的。压电膜被限制在半径为1.8mm的圆中。 X射线衍射（XRD）表征表明，沉积的Pt（底部电极）具有（111）优先取向。还表明，ZnO薄膜是c轴（002）取向的。所实现的ZnO薄膜的扫描电子显微镜（SEM）显示出表面上具有蜂窝状结构的致密晶粒的横截面证据和柱状结构的证据。测量结果表明，所有衬底温度都适合获得高质量的ZnO，但是Ts = 300°C是最佳选择。为了评估BAW的压电特性，已进行了电输入阻抗和导纳的测量。他们显示出压电反应的证据。共振频率在524.5 MHz处获得，反共振频率在540.9 MHz处获得。机电耦合系数Keff 2 经评估为7.26％，这是压电响应良好的指标。从该测量值推导出ZnO平板中的厚度d和波速Vp分别为6.15μm和6451.35m / s，并且压电常数ℯ33等于1.21C / m 2 < / sup>。

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