SiO2/SiN infrared absorbing films for uncooled pyroelectric sensor and its fabrication and evaluation

机译：非冷却热释电传感器用SiO2 / SiN红外吸收膜及其制备与评价

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In this paper, we report a development of fabrication processes and characteristics of uncooled pyroelectric infrared sensor using epitaxial Pb(Zr,Ti)O3 thin film on γ-Al2O3/Si substrate. Newly designed SiO2/SiN double layer absorbing film is calculated and evaluated to fabricate on the sensor for infrared absorption efficiency improvement. The absorption of 70% is achieved with the double layer thickness of 1.4 µm in wavelength between 8 to 12 µm. Infrared responsivity of 176 V/W is obtained at 10 Hz.

机译：在本文中，我们报告了在γ-Al2O3/ Si衬底上使用外延Pb（Zr，Ti）O3薄膜的非冷却热释电红外传感器的制造工艺和特性的发展。计算并评估了新设计的SiO2 / SiN双层吸收膜，以便在传感器上制造该膜，以提高红外吸收效率。双层厚度为1.4 µm，波长在8至12 µm之间，吸收率达到70％。在10 Hz时获得176 V / W的红外响应度。

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来源
《2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy》|2013年|329-331|共3页
会议地点 Prague(CZ)
作者
Oishi Koji; Oe Kazuki; Ishida Makoto; Akai Daisuke;
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Electric and Electronic Information Department, Toyohashi University of Technology, Aich, Japan;

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正文语种 eng
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专利

1. SiO_2/SiN Multilayer-Stack Infrared Absorber Integrated on Pb(Zr_(0.4),Ti_(0.6))O_3 Film Pyroelectric Sensors on γ-Al_2O_3/Si Substrate [J] . Koji Oishi, Shota Yonemaru, Daisuke Akai, Sensors and materials . 2015,第2期

机译：在γ-Al_2O_3/ Si衬底上的Pb（Zr_（0.4），Ti_（0.6））O_3薄膜热释电传感器上集成SiO_2 / SiN多层堆叠红外吸收剂
2. Fabrication and Characterization of Integrated Uncooled Infrared Sensor Arrays Using a-Si Thin-Film Transistors as Active Elements [J] . Liang Dong, Ruifeng Yue, Lilian Liu Journal of Microelectromechanical Systems . 2005,第5期

机译：使用非晶硅薄膜晶体管作为有源元件的集成式非制冷红外传感器阵列的制作与表征
3. Design, Fabrication And Characterization Of Pyroelectric Thin Film And Its Application For Infrared Gas Sensors [J] . Tan Qiu-lin, Zhang Wen-dong, Xue Chen-yang, Microelectronics journal . 2009,第1期

机译：热释电薄膜的设计，制作，表征及其在红外气体传感器中的应用
4. SiO_2/SiN Infrared Absorbing Films for Uncooled Pyroelectric Sensor and its Fabrication and Evaluation [C] . Koji Oishi, Kazuki Oe, Makoto Ishida, IEEE International Symposium on Applications of Ferroelectrics . 2013

机译：用于未冷却热电传感器的SiO_2 / Sin红外吸收薄膜及其制造和评估
5. Reactive sputter deposition of vanadium, nickel, and molybdenum oxide thin films for use in uncooled infrared imaging. [D] . Jin, Yao. 2014

机译：钒，镍和氧化钼薄膜的反应溅射沉积，用于未冷却的红外成像。
6. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application [O] . Bhabani Shankar Sahu, Florence Gloux, Abdelilah Slaoui, 2011

机译：HfO2 / SiO2叠层隧道电介质的SiN薄膜中离子注入能量对Ge纳米晶体合成的影响
7. Fabrication and characteristics PbTiO3/P(VDF/TrFE) thin films for pyroelectric infrared sensor [O] . Sung-Yeol Kwon 2003

机译：用于热电红外传感器的制造和特征PBTIO3 / P（VDF / TRFE）薄膜

SiO2/SiN infrared absorbing films for uncooled pyroelectric sensor and its fabrication and evaluation

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