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首页> 外文会议>2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy >Niobium doped lead zirconate titanate thin films grown by chemical solution deposition
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Niobium doped lead zirconate titanate thin films grown by chemical solution deposition

机译：化学溶液沉积法制备铌掺杂锆钛酸铅钛薄膜

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Niobium (Nb) doping is known to have a beneficial effect on many properties of lead zirconate titanate (PZT) ceramics. Substituting titanium (Ti) or zirconium (Zr) on a B-site, Nb ions form positive point defects that repel oxygen vacancies, even though they are compensated by negative lead (Pb) vacancies of half their concentration. As a consequence, PZT domains are known to move more easily. Nb doped ceramics excel in high piezoelectric coefficients dij and eij, and high permittivities. In this work, we investigated concentration gradient issues, dielectric, ferroelectric, and piezoelectric properties of Nb doped, {100}-textured PZT thin films. The {100}-texture could be maintained throughout the investigated compositional range. As it is known that sol-gel processing tends to form Zr/Ti gradients, it was of interest to know whether Nb forms gradients, and if yes, in which direction. We observed a behaviour similar to one of Zr, an enrichment away from where nucleation happens, thus the top part of the layer. The transverse piezoelectric coefficient e31,f was measured in the direct mode at zero electric field, and in the converse mode as a function of the electric field. The Nb doped films exhibited higher dielectric constants and higher break-down fields, but lower remnant polarizations because of enhanced backs-switching. As compared to “standard” sol-gel PZT films, they show an increased piezoelectric performance at high fields and improved reliability.
机译：已知铌（Nb）掺杂对锆钛酸铅（PZT）陶瓷的许多性能具有有益的影响。 Nb离子取代B位上的钛（Ti）或锆（Zr），会形成正点缺陷，该缺陷会排斥氧空位，即使它们被浓度一半的负铅（Pb）空位补偿了。结果，已知PZT域更容易移动。 Nb掺杂的陶瓷在高压电系数dij和eij以及高介电常数方面表现出色。在这项工作中，我们研究了Nb掺杂{100}织构的PZT薄膜的浓度梯度问题，介电，铁电和压电特性。在整个研究的组成范围内都可以保持{100}纹理。众所周知，溶胶-凝胶加工倾向于形成Zr / Ti梯度，因此有兴趣知道Nb是否形成梯度，如果是，则在哪个方向形成梯度。我们观察到了与Zr之一相似的行为，即远离成核的位置（因此是该层的顶部）的富集。横向压电系数e31，f在零电场下以直接模式进行测量，而在反向模式下则根据电场进行测量。掺Nb的薄膜具有较高的介电常数和较高的击穿场，但由于增强了反向开关，因此残留极化较低。与“标准”溶胶-凝胶PZT膜相比，它们在高电场下显示出增强的压电性能并提高了可靠性。

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