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首页> 外文会议>2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference: Challenges of Change - Shaping the Future, 16th International Conference on Electronic Materials and packaging >Adhesive enabling technology for directly plating copper onto glass
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Adhesive enabling technology for directly plating copper onto glass

机译：直接在玻璃上电镀铜的粘合技术

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An economical and reliable copper metallization of dimensionally stable, non-conductive substrates, such as glass and ceramic, is becoming a major focus in electronic packaging technologies. Conventionally, adhesion on these substrates is achieved either by sputtering a thin metallic adhesive (Ti, Cr) followed by a copper seed layer or by high temperature lamination. This study has demonstrated that a metal oxide adhesion promoter (MOAP) layer functions as a strong adhesion layer between Cu and glass/ceramic, even when Cu films are formed near room temperature. In this new approach a 10-200 nm thick adhesive metal oxide layer is deposited by a modified sol gel process followed by sintering, thus enabling electroless, and galvanic metal plating directly on glass/ceramic. With the new approach, Cu can be plated on different glass types or glass with different roughness. The new approach also can be used on ceramics such as Al2O and BaTiO. Cu film thickness of over 50 μm can be applied without delamination. Adhesion at 15 μm Cu thickness as measured by 90° peel strength tests can achieve 5 N/cm or even higher values. The plated layer stands up well to reflow shock (260C) and HAST without significant loss of adhesion. Good coverage of MOAP and adhesion have been also demonstrated inside the via holes of patterned substrates without indication of blockages by the process. Reliable adhesion of copper to glass is a major hurdle for the entry of glass substrates into the electronic packaging market. Otherwise, glass is a strong competitor to organic substrates due to its superior flatness, dimensional stability, thermal and dielectric properties. These are essential requirements for high density interconnects, high speed signal transfer and IC substrate packaging. Typically, adhesion on non-conductive substrates is often achieved by sputtering a thin metallic adhesive (Ti, Cr) and copper seed layer or by mechanical anchoring.- However, sputtering requires high vacuum technology which has a relatively low throughput and high capital investment cost. Besides, the thickness of the galvanic copper layer constitutes a major challenge leading to its facile delamination from the glass. Mechanical anchoring, on the other hand, requires strong roughening of the substrate surface which negatively impacts the functionality of the metallized surface and the roughening process is difficult to control due to the variable glass compositions. Moreover, the improvements in adhesion that come from such treatments on glass substrates have not always been significant. The use of sol-gel deposition to produce a thin film layer on substrates is widely known in the semiconductor industry. A metal oxide based sol-gel process, which retains the original flatness of the substrate, is discussed in this paper.
机译：尺寸稳定的非导电基板（例如玻璃和陶瓷）的经济，可靠的铜金属化正在成为电子封装技术的主要重点。常规地，通过溅射薄金属粘合剂（Ti，Cr），然后溅射铜籽晶层，或通过高温层压来实现在这些基板上的粘合。这项研究表明，即使在室温附近形成Cu膜时，金属氧化物增粘剂（MOAP）层仍可充当Cu与玻璃/陶瓷之间的牢固粘合层。在这种新方法中，通过改进的溶胶凝胶工艺沉积10-200 nm厚的粘合金属氧化物层，然后进行烧结，从而可以在玻璃/陶瓷上直接进行化学镀和电镀电镀。通过这种新方法，可以将Cu镀在不同类型的玻璃或具有不同粗糙度的玻璃上。这种新方法还可以用于陶瓷​​，如Al2O和BaTiO。可以施加超过50μm的Cu膜厚度而不会分层。通过90°剥离强度测试测得的Cu厚度为15μm时的附着力可达到5 N / cm甚至更高。镀层可以很好地抵抗回流冲击（260C）和HAST，而不会显着降低附着力。在图案化衬底的通孔内部也已经证明了MOAP的良好覆盖性和附着力，没有表明该工艺有堵塞。铜与玻璃的可靠粘合是玻璃基板进入电子封装市场的主要障碍。否则，玻璃因其出色的平坦度，尺寸稳定性，热和介电性能而成为有机基材的强大竞争对手。这些是高密度互连，高速信号传输和IC基板封装的基本要求。通常，通常通过溅射薄金属粘合剂（Ti，Cr）和铜籽晶层或通过机械锚固来实现在非导电基板上的粘合。-但是，溅射需要高真空技术，该技术具有相对较低的产量和较高的投资成本。此外，电镀铜层的厚度是导致其从玻璃容易分层的主要挑战。另一方面，机械锚固需要对衬底表面进行强烈的粗糙化处理，这会对金属化表面的功能性产生负面影响，并且由于可变的玻璃组成，粗糙化处理难以控制。而且，在玻璃基板上进行的这种处理所产生的粘合力的改善并不总是很明显。在半导体工业中，使用溶胶-凝胶沉积在衬底上产生薄膜层是众所周知的。本文讨论了一种基于金属氧化物的溶胶-凝胶工艺，该工艺可保持基材的原始平整度。

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